Datasheets
NDP506A by:

Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for NDP506A by National Semiconductor Corporation

Overview of NDP506A by National Semiconductor Corporation

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Applications Education and Research Industrial Automation Aerospace and Defense Agriculture Technology Robotics and Drones

Price & Stock for NDP506A

Part # Distributor Description Stock Price Buy
Quest Components POWER FIELD-EFFECT TRANSISTOR, 26A I(D), 60V, 0.05OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB 2437
  • 1 $6.0000
  • 834 $2.2000
  • 1,365 $2.1000
$2.1000 / $6.0000 Buy Now

Part Details for NDP506A

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NDP506A Part Data Attributes

NDP506A National Semiconductor Corporation
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NDP506A National Semiconductor Corporation Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Package Description TO-220, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 26 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 200 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 60 W
Pulsed Drain Current-Max (IDM) 78 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 180 ns
Turn-on Time-Max (ton) 220 ns

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