Part Details for NDD03N50Z-1G by onsemi
Overview of NDD03N50Z-1G by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for NDD03N50Z-1G
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
NDD03N50Z-1G
|
Avnet Americas | Trans MOSFET N-CH 500V 2.6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: NDD03N50Z-1G) RoHS: Compliant Min Qty: 1233 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Tube | 0 |
|
$0.2515 / $0.3001 | Buy Now |
|
|
Bristol Electronics | 150 |
|
RFQ | ||
|
|
Rochester Electronics | NDD03N50Z - 2.6A, 500V, 0.0033ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2656 |
|
$0.2514 / $0.2958 | Buy Now |
Part Details for NDD03N50Z-1G
NDD03N50Z-1G CAD Models
NDD03N50Z-1G Part Data Attributes
|
|
NDD03N50Z-1G
onsemi
Buy Now
Datasheet
|
Compare Parts:
NDD03N50Z-1G
onsemi
Power MOSFET 500V 2.6A 3.3 Ohm Single N-Channel DPAK, DPAK INSERTION MOUNT, 75-TUBE
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | DPAK INSERTION MOUNT | |
| Package Description | IPAK-3 | |
| Pin Count | 4 | |
| Manufacturer Package Code | 369 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 2.6 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 58 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |