NDB708A
Description: Power Field-Effect Transistor, 60A I(D), 80V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Overview of NDB708A by Fairchild Semiconductor Corporation

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Industrial Automation Energy and Power Systems Electronic Manufacturing Renewable Energy

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Part Data Attributes for NDB708A by Fairchild Semiconductor Corporation

NDB708A
Fairchild Semiconductor Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
80 V
Drain Current-Max (ID)
60 A
Drain-source On Resistance-Max
0.022 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
180 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. NDB708A
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 60A I(D), 80V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    VS

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