Part Details for NDB6030L by Fairchild Semiconductor Corporation
Overview of NDB6030L by Fairchild Semiconductor Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for NDB6030L
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-NDB6030L-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 175 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
580 In Stock |
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$1.7200 | Buy Now |
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Bristol Electronics | 765 |
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RFQ | ||
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Rochester Electronics | 52A, 30V, 0.0135ohm, N-Channel Power MOSFET, TO-263AB ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 580 |
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$1.4000 / $1.6500 | Buy Now |
Part Details for NDB6030L
NDB6030L CAD Models
NDB6030L Part Data Attributes
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NDB6030L
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
NDB6030L
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 52A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB,
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 52 A | |
| Drain-source On Resistance-Max | 0.0135 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 156 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn85Pb15) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for NDB6030L
This table gives cross-reference parts and alternative options found for NDB6030L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDB6030L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDB6030L | 52A, 30V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Rochester Electronics LLC | NDB6030L vs NDB6030L |