Part Details for NDB5060L by onsemi
Overview of NDB5060L by onsemi
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for NDB5060L
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
83C0056
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Newark | Transistor, mosfet, n-Channel,60V V(Br)Dss,26A I(D),to-263Ab Rohs Compliant: Yes |Onsemi NDB5060L Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1500 / $1.5400 | Buy Now |
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DISTI #
54AH9423
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Newark | Mosfet, N-Ch, 60V, 26A, 175Deg C, 68W Rohs Compliant: Yes |Onsemi NDB5060L Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.8800 / $2.8400 | Buy Now |
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DISTI #
NDB5060LCT-ND
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DigiKey | MOSFET N-CH 60V 26A D2PAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
596 In Stock |
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$1.1848 / $2.7300 | Buy Now |
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DISTI #
NDB5060L
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Avnet Americas | Trans MOSFET N-CH 60V 26A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: NDB5060L) RoHS: Compliant Min Qty: 1600 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.6319 / $0.7542 | Buy Now |
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DISTI #
512-NDB5060L
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Mouser Electronics | MOSFET N-Ch LL FET Enhancement Mode RoHS: Compliant | 1576 |
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$1.1800 / $2.7300 | Buy Now |
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Future Electronics | N-Channel 60 V 50 mΩ 3.7 W Surface Mount Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 1600 Package Multiple: 800 Lead time: 9 Weeks Container: Reel | 0Reel |
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$1.2100 / $1.2700 | Buy Now |
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Rochester Electronics | NDB5060L - Power Field-Effect Transistor, 26A, 60V, 0.05ohm, N-Channel, MOSFET, TO-263AB RoHS: Compliant Status: Active Min Qty: 1 | 4000 |
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$1.1400 / $1.3400 | Buy Now |
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DISTI #
NDB5060L
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 | 0 |
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$1.1500 | Buy Now |
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DISTI #
NDB5060L
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Avnet Silica | Trans MOSFET N-CH 60V 26A 3-Pin(2+Tab) D2PAK T/R (Alt: NDB5060L) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
NDB5060L
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EBV Elektronik | Trans MOSFET N-CH 60V 26A 3-Pin(2+Tab) D2PAK T/R (Alt: NDB5060L) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for NDB5060L
NDB5060L CAD Models
NDB5060L Part Data Attributes
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NDB5060L
onsemi
Buy Now
Datasheet
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Compare Parts:
NDB5060L
onsemi
N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 26A, 35mΩ, 800-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | D2PAK-3 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 28 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 26 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 68 W | |
| Pulsed Drain Current-Max (IDM) | 78 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 280 ns | |
| Turn-on Time-Max (ton) | 420 ns |
Alternate Parts for NDB5060L
This table gives cross-reference parts and alternative options found for NDB5060L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NDB5060L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NDB5060L | Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | NDB5060L vs NDB5060L |