Part Details for NAND04GR3B2DN6E by Micron Technology Inc
Results Overview of NAND04GR3B2DN6E by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
NAND04GR3B2DN6E Information
NAND04GR3B2DN6E by Micron Technology Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for NAND04GR3B2DN6E
NAND04GR3B2DN6E CAD Models
NAND04GR3B2DN6E Part Data Attributes
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NAND04GR3B2DN6E
Micron Technology Inc
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Datasheet
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NAND04GR3B2DN6E
Micron Technology Inc
Flash, 512MX8, 25000ns, PDSO48, 12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | TSOP | |
| Package Description | TSSOP, TSSOP48,.8,20 | |
| Pin Count | 48 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Access Time-Max | 25000 ns | |
| Command User Interface | YES | |
| Data Polling | NO | |
| JESD-30 Code | R-PDSO-G48 | |
| JESD-609 Code | e3 | |
| Length | 18.4 mm | |
| Memory Density | 4294967296 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Number of Functions | 1 | |
| Number of Sectors/Size | 4K | |
| Number of Terminals | 48 | |
| Number of Words | 536870912 words | |
| Number of Words Code | 512000000 | |
| Operating Mode | ASYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 512MX8 | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSSOP | |
| Package Equivalence Code | TSSOP48,.8,20 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | |
| Page Size | 2K words | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Programming Voltage | 1.8 V | |
| Qualification Status | Not Qualified | |
| Ready/Busy | YES | |
| Seated Height-Max | 1.2 mm | |
| Sector Size | 128K | |
| Standby Current-Max | 0.00005 A | |
| Supply Current-Max | 0.02 mA | |
| Supply Voltage-Max (Vsup) | 1.95 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.5 mm | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Toggle Bit | NO | |
| Width | 12 mm |
Alternate Parts for NAND04GR3B2DN6E
This table gives cross-reference parts and alternative options found for NAND04GR3B2DN6E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NAND04GR3B2DN6E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| S34MS04G200BHV000 | SkyHigh Memory Limited | Check for Price | Flash, 512MX8, PBGA63, BGA-63 | NAND04GR3B2DN6E vs S34MS04G200BHV000 |
| K9K4G08Q0M-YIB00 | Samsung Semiconductor | Check for Price | Flash, 512MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 | NAND04GR3B2DN6E vs K9K4G08Q0M-YIB00 |
| S34MS04G200TFI000 | Cypress Semiconductor | Check for Price | Flash, 512MX8, 45ns, PDSO48, TSOP1-48 | NAND04GR3B2DN6E vs S34MS04G200TFI000 |
| S34MS04G200BHI013 | Cypress Semiconductor | Check for Price | Flash, 512MX8, 45ns, PBGA63, BGA-63 | NAND04GR3B2DN6E vs S34MS04G200BHI013 |
| S34MS04G200TFV003 | SkyHigh Memory Limited | Check for Price | Flash, 512MX8, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, PLASTIC, MO-142DDD, TSOP1-48 | NAND04GR3B2DN6E vs S34MS04G200TFV003 |
| K9K4G08Q0M-YCB00 | Samsung Semiconductor | Check for Price | Flash, 512MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48 | NAND04GR3B2DN6E vs K9K4G08Q0M-YCB00 |
| S34MS04G200BHI003 | Cypress Semiconductor | Check for Price | Flash, 512MX8, 45ns, PBGA63, BGA-63 | NAND04GR3B2DN6E vs S34MS04G200BHI003 |
| S34MS04G200TFV000 | SkyHigh Memory Limited | Check for Price | Flash, 512MX8, PDSO48, 12 X 20 MM, 1.20 MM HEIGHT, LEAD FREE, PLASTIC, MO-142DDD, TSOP1-48 | NAND04GR3B2DN6E vs S34MS04G200TFV000 |
| S34MS04G200BHI003 | SkyHigh Memory Limited | Check for Price | Flash, 512MX8, PBGA63, BGA-63 | NAND04GR3B2DN6E vs S34MS04G200BHI003 |
| S34MS04G200TFI010 | Cypress Semiconductor | Check for Price | Flash, 512MX8, 45ns, PDSO48, TSOP1-48 | NAND04GR3B2DN6E vs S34MS04G200TFI010 |