Part Details for MXUPTB33E3 by Microsemi Corporation
Overview of MXUPTB33E3 by Microsemi Corporation
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Part Details for MXUPTB33E3
MXUPTB33E3 CAD Models
MXUPTB33E3 Part Data Attributes
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MXUPTB33E3
Microsemi Corporation
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MXUPTB33E3
Microsemi Corporation
Trans Voltage Suppressor Diode, 150W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-216AA, ROHS COMPLIANT, PLASTIC, POWERMITE-2
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Part Package Code | DO-216AA | |
Pin Count | 2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.50 | |
Samacsys Manufacturer | Microsemi Corporation | |
Breakdown Voltage-Min | 36.8 V | |
Clamping Voltage-Max | 56.7 V | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE | |
JEDEC-95 Code | DO-216AA | |
JESD-30 Code | S-PSSO-G1 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Non-rep Peak Rev Power Dis-Max | 1000 W | |
Number of Elements | 1 | |
Number of Terminals | 1 | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -65 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Polarity | BIDIRECTIONAL | |
Power Dissipation-Max | 2.5 W | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500 | |
Rep Pk Reverse Voltage-Max | 33 V | |
Reverse Current-Max | 1 µA | |
Reverse Test Voltage | 33 V | |
Surface Mount | YES | |
Technology | AVALANCHE | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE |