Datasheets
MX29LV400CBMC-55Q by: Macronix International Co Ltd

Flash, 4MX16, 55ns, PDSO44, 0.500 INCH, ROHS COMPLIANT, MO-175, SOP-44

Part Details for MX29LV400CBMC-55Q by Macronix International Co Ltd

Results Overview of MX29LV400CBMC-55Q by Macronix International Co Ltd

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

MX29LV400CBMC-55Q Information

MX29LV400CBMC-55Q by Macronix International Co Ltd is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for MX29LV400CBMC-55Q

Part # Distributor Description Stock Price Buy
DISTI # MX29LV400CBMC-55Q
TME IC: FLASH memory, 4MbFLASH, 55ns, SOP44, parallel Min Qty: 1 0
  • 1 $3.4200
  • 3 $3.1400
  • 16 $2.8500
  • 64 $2.5700
$2.5700 / $3.4200 RFQ
DISTI # MX29LV400CBMC-55Q/TRAY
Avnet Silica NOR Flash Parallel 33V 4Mbit 512K256K x 8bit16bit 55ns 44Pin SOP (Alt: MX29LV400CBMC-55Q/TRAY) RoHS: Compliant Min Qty: 40 Package Multiple: 40 Silica - 0
Buy Now

Part Details for MX29LV400CBMC-55Q

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MX29LV400CBMC-55Q Part Data Attributes

MX29LV400CBMC-55Q Macronix International Co Ltd
Buy Now Datasheet
Compare Parts:
MX29LV400CBMC-55Q Macronix International Co Ltd Flash, 4MX16, 55ns, PDSO44, 0.500 INCH, ROHS COMPLIANT, MO-175, SOP-44
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MACRONIX INTERNATIONAL CO LTD
Part Package Code SOIC
Package Description SOP, SOP44,.63
Pin Count 44
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.51
Access Time-Max 55 ns
Alternate Memory Width 8
Boot Block BOTTOM
Command User Interface YES
Common Flash Interface YES
Data Polling YES
JESD-30 Code R-PDSO-G44
JESD-609 Code e3
Length 28.5 mm
Memory Density 67108864 bit
Memory IC Type FLASH
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Sectors/Size 1,2,1,7
Number of Terminals 44
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16
Package Body Material PLASTIC/EPOXY
Package Code SOP
Package Equivalence Code SOP44,.63
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Parallel/Serial PARALLEL
Programming Voltage 3 V
Qualification Status Not Qualified
Ready/Busy YES
Seated Height-Max 3 mm
Sector Size 16K,8K,32K,64K
Standby Current-Max 0.000005 A
Supply Current-Max 0.03 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Pitch 1.27 mm
Terminal Position DUAL
Toggle Bit YES
Type NOR TYPE
Width 12.6 mm

MX29LV400CBMC-55Q Related Parts

MX29LV400CBMC-55Q Frequently Asked Questions (FAQ)

  • The MX29LV400CBMC-55Q can operate from -40°C to 85°C, but it's recommended to use it within 0°C to 70°C for optimal performance.

  • The HOLD# signal should be asserted low to pause the current operation and enter a low-power state. De-asserting HOLD# will resume the operation from where it was paused.

  • The power-up sequence should be VCC first, then VPP, and finally the clock signal. This ensures proper device initialization and prevents latch-up conditions.

  • The RY/BY# signal can be used to monitor the device's status. When RY/BY# is low, the device is busy with a write or erase operation. When it's high, the operation is complete.

  • The WP# signal is used to protect the entire memory array or specific sectors from write or erase operations. When WP# is low, the protected areas are write-protected.