Datasheets
MW7IC2220NBR1 by:
Freescale Semiconductor
Freescale Semiconductor
NXP Semiconductors
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Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 2 W Avg., 28 V

Part Details for MW7IC2220NBR1 by Freescale Semiconductor

Results Overview of MW7IC2220NBR1 by Freescale Semiconductor

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MW7IC2220NBR1 Information

MW7IC2220NBR1 by Freescale Semiconductor is an RF/Microwave Amplifier.
RF/Microwave Amplifiers are under the broader part category of RF and Microwave Components.

RF and Microwave Engineering focuses on the design and operation of devices that transmit or receive radio waves. The main distinction between RF and microwave engineering is their wavelength, which influences how energy is transmitted and used in various applications. Read more about RF and Microwave Components on our RF and Microwave part category page.

Price & Stock for MW7IC2220NBR1

Part # Distributor Description Stock Price Buy
Rochester Electronics Narrow Band High Power Amplifier, 2000MHz Min, 2200MHz Max, 1 Func, MOS RoHS: Compliant Status: Obsolete Min Qty: 1 2
  • 1 $39.2200
  • 25 $38.4400
  • 100 $36.8700
  • 500 $35.3000
  • 1,000 $33.3400
$33.3400 / $39.2200 Buy Now

Part Details for MW7IC2220NBR1

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MW7IC2220NBR1 Part Data Attributes

MW7IC2220NBR1 Freescale Semiconductor
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MW7IC2220NBR1 Freescale Semiconductor Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 2 W Avg., 28 V
Select a part to compare:
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FREESCALE SEMICONDUCTOR INC
Package Description ROHS COMPLIANT, PLASTIC, CASE 1329-09, TO-270, WB-16, 16 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.33.00.01
Characteristic Impedance 50 Ω
Construction COMPONENT
Gain 29 dB
Input Power-Max (CW) 20 dBm
JESD-609 Code e3
Number of Functions 1
Operating Frequency-Max 2200 MHz
Operating Frequency-Min 2000 MHz
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Equivalence Code FLNG,.8''H SPACE
Power Supplies 28 V
RF/Microwave Device Type NARROW BAND HIGH POWER
Technology MOS
Terminal Finish Matte Tin (Sn)
VSWR-Max 5

Alternate Parts for MW7IC2220NBR1

This table gives cross-reference parts and alternative options found for MW7IC2220NBR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MW7IC2220NBR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MW7IC18100NR1 Freescale Semiconductor Check for Price GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 1990 MHz, 100 W, 28 V MW7IC2220NBR1 vs MW7IC18100NR1
MD7IC2755GNR1 Freescale Semiconductor Check for Price WiMAX RF LDMOS Wideband Integrated Power Amplifier, 2500-2700 MHz, 10 W Avg., 28 V MW7IC2220NBR1 vs MD7IC2755GNR1
MD7IC2050GNR1 Freescale Semiconductor Check for Price Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 1880-2100 MHz, 10 W Avg., 28 V MW7IC2220NBR1 vs MD7IC2050GNR1
MW7IC2725NR1 Freescale Semiconductor Check for Price WiMAX RF LDMOS Wideband Integrated Power Amplifier, 2500-2700 MHz, 4 W Avg., 28 V MW7IC2220NBR1 vs MW7IC2725NR1
MWIC930NR1 Freescale Semiconductor Check for Price Single N-CDMA, GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 746-960 MHz, 30 W, 26-28 V MW7IC2220NBR1 vs MWIC930NR1
MW7IC2040NBR1 Freescale Semiconductor Check for Price Single W-CDMA, GSM/EDGE, RF LDMOS Wideband Integrated PA, 1930-1990 MHz, 1805-1880 MHz, 4 W, 28 V MW7IC2220NBR1 vs MW7IC2040NBR1
MW7IC2240NR1 Freescale Semiconductor Check for Price Single W-CDMA RF LDMOS Wideband Integrated Power Amplifier, 2110-2170 MHz, 4 W Avg., 28 V MW7IC2220NBR1 vs MW7IC2240NR1
MW6IC2015NBR1 Freescale Semiconductor Check for Price 1805MHz - 1990MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1329-09, WB-16, TO-272, 16 PIN MW7IC2220NBR1 vs MW6IC2015NBR1
MW7IC2750NR1 Freescale Semiconductor Check for Price 2500MHz - 2700MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1618-02, TO-270, WB-14, 14 PIN MW7IC2220NBR1 vs MW7IC2750NR1
MW7IC18100NBR1 Freescale Semiconductor Check for Price GSM/GSM EDGE RF LDMOS Wideband Integrated Power Amplifier, 1990 MHz, 100 W, 28 V MW7IC2220NBR1 vs MW7IC18100NBR1

MW7IC2220NBR1 Related Parts

MW7IC2220NBR1 Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane, separate power planes for VCC and VDD, and careful routing of high-frequency signals is recommended. Refer to the application note AN1955 for more details.

  • The biasing circuit should be designed to provide a stable voltage and current to the LNA. A resistive divider with a bypass capacitor can be used to set the bias voltage. The bias current should be limited to 10mA to prevent overheating.

  • The MW7IC2220NBR1 is rated for operation up to 150°C, but it's recommended to keep the junction temperature below 125°C for optimal performance and reliability.

  • Use ESD protection diodes or TVS diodes on the input and output pins, and follow proper handling and storage procedures to prevent ESD damage.

  • The input and output matching networks should be designed to match the impedance of the device to the system impedance (typically 50 ohms). A pi-network or a T-network can be used, and the values should be optimized for the specific frequency band of operation.