MUPTB28
Description: Trans Voltage Suppressor Diode,

Overview of MUPTB28 by Microsemi Corporation

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Environmental Monitoring Industrial Automation Aerospace and Defense Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Telecommunications Communication and Networking

CAD Models for MUPTB28 by Microsemi Corporation
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Part Data Attributes for MUPTB28 by Microsemi Corporation

MUPTB28
Microsemi Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
MICROSEMI CORP
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.10.00.50
Breakdown Voltage-Min
31 V
Clamping Voltage-Max
47.8 V
Configuration
SINGLE
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code
DO-216AA
JESD-30 Code
S-PSSO-G1
Moisture Sensitivity Level
1
Non-rep Peak Rev Power Dis-Max
1000 W
Number of Elements
1
Number of Terminals
1
Operating Temperature-Max
150 °C
Operating Temperature-Min
-65 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
SQUARE
Package Style
SMALL OUTLINE
Polarity
BIDIRECTIONAL
Power Dissipation-Max
2.5 W
Reference Standard
AEC-Q101; IEC-61000-4-2, 4-4, 4-5; MIL-19500
Rep Pk Reverse Voltage-Max
28 V
Reverse Current-Max
1 µA
Reverse Test Voltage
28 V
Surface Mount
YES
Technology
AVALANCHE
Terminal Form
GULL WING
Terminal Position
SINGLE
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