Datasheets
MUN5311DW1T1 by:

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon

Part Details for MUN5311DW1T1 by LRC Leshan Radio Co Ltd

Overview of MUN5311DW1T1 by LRC Leshan Radio Co Ltd

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for MUN5311DW1T1

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MUN5311DW1T1 Part Data Attributes:

MUN5311DW1T1 LRC Leshan Radio Co Ltd
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MUN5311DW1T1 LRC Leshan Radio Co Ltd Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, PNP, Silicon
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer LESHAN RADIO CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 35
Number of Elements 2
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 0.385 W
Surface Mount YES
Transistor Element Material SILICON

Alternate Parts for MUN5311DW1T1

This table gives cross-reference parts and alternative options found for MUN5311DW1T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MUN5311DW1T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MUN5311DW1T1 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, 6 PIN onsemi MUN5311DW1T1 vs MUN5311DW1T1
MUN5311DW1T1 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, 6 PIN Rochester Electronics LLC MUN5311DW1T1 vs MUN5311DW1T1
MUN5311DW1T1G Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL onsemi MUN5311DW1T1 vs MUN5311DW1T1G
MUN5311DW1T1 100mA, 50V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR Motorola Mobility LLC MUN5311DW1T1 vs MUN5311DW1T1
Part Number Description Manufacturer Compare
934050170165 Small Signal Bipolar Transistor Nexperia MUN5311DW1T1 vs 934050170165
PUMD3T/R Small Signal Bipolar Transistor Nexperia MUN5311DW1T1 vs PUMD3T/R
PUMD3,165 PUMD3 - 50 V, 100 mA NPN/PNP resistor-equipped double transistor;ntttR1 = 10 kΩ, R2 = 10 kΩ@en-us TSSOP 6-Pin Nexperia MUN5311DW1T1 vs PUMD3,165
934050170115 Small Signal Bipolar Transistor Nexperia MUN5311DW1T1 vs 934050170115
MUN5311DW1T1G Complementary Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL onsemi MUN5311DW1T1 vs MUN5311DW1T1G
PUMD3,115 PUMD3 - 50 V, 100 mA NPN/PNP resistor-equipped double transistor;ntttR1 = 10 kΩ, R2 = 10 kΩ@en-us TSSOP 6-Pin Nexperia MUN5311DW1T1 vs PUMD3,115
PUMD3,165 PEMD3; PIMD3; PUMD3 - NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ TSSOP 6-Pin NXP Semiconductors MUN5311DW1T1 vs PUMD3,165
PUMD30,115 PUMD12 - 50 V, 100 mA NPN/PNP resistor-equipped double transistor;n R1 = 2.2 kΩ, R2 = open@en-us TSSOP 6-Pin Nexperia MUN5311DW1T1 vs PUMD30,115
PUMD30 Small Signal Bipolar Transistor Nexperia MUN5311DW1T1 vs PUMD30
PUMD30,115 PEMD30; PUMD30 - NPN/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open TSSOP 6-Pin NXP Semiconductors MUN5311DW1T1 vs PUMD30,115

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