Datasheets
MUN2213T1 by:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-59, 3 PIN

Part Details for MUN2213T1 by Motorola Semiconductor Products

Overview of MUN2213T1 by Motorola Semiconductor Products

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Price & Stock for MUN2213T1

Part # Distributor Description Stock Price Buy
Bristol Electronics   3294
RFQ
Quest Components Pre-biased "digital" Transistor, 50v V(br)ceo, 100ma I(c), Sc-59 5388
  • 1 $0.0672
  • 199 $0.0420
  • 1,191 $0.0302
$0.0302 / $0.0672 Buy Now
Quest Components Pre-biased "digital" Transistor, 50v V(br)ceo, 100ma I(c), Sc-59 2400
  • 1 $0.0900
  • 334 $0.0300
  • 1,668 $0.0090
$0.0090 / $0.0900 Buy Now
Quest Components Pre-biased "digital" Transistor, 50v V(br)ceo, 100ma I(c), Sc-59 492
  • 1 $0.5450
  • 38 $0.1635
  • 307 $0.1090
$0.1090 / $0.5450 Buy Now
Chip 1 Exchange INSTOCK 1500
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 10950
  • 1 $0.7700
  • 100 $0.5800
  • 1,000 $0.5000
$0.5000 / $0.7700 Buy Now

Part Details for MUN2213T1

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MUN2213T1 Part Data Attributes:

MUN2213T1 Motorola Semiconductor Products
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MUN2213T1 Motorola Semiconductor Products Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SC-59, 3 PIN
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Package Description SC-59, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature BUILT IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 80
JESD-30 Code R-PDSO-G3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation Ambient-Max 0.2 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max 0.25 V

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