Part Details for MUBW35-12A7 by IXYS Corporation
Overview of MUBW35-12A7 by IXYS Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| R5F212A7SNFA#V2 | Renesas Electronics Corporation | 16-bit Microcontrollers with R8C CPU Core (Non Promotion) | |
| R5F212A7SDFP#X6 | Renesas Electronics Corporation | 16-bit Microcontrollers with R8C CPU Core (Non Promotion) | |
| R5F212A7SNFA#X6 | Renesas Electronics Corporation | 16-bit Microcontrollers with R8C CPU Core (Non Promotion) |
Part Details for MUBW35-12A7
MUBW35-12A7 CAD Models
MUBW35-12A7 Part Data Attributes
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MUBW35-12A7
IXYS Corporation
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Datasheet
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MUBW35-12A7
IXYS Corporation
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | MODULE | |
| Package Description | MODULE-24 | |
| Pin Count | 24 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW SWITCHING LOSS, LOW SATURATION VOLTAGE | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | COMPLEX | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X24 | |
| JESD-609 Code | e3 | |
| Number of Elements | 7 | |
| Number of Terminals | 24 | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 225 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 570 ns | |
| Turn-on Time-Nom (ton) | 170 ns | |
| VCEsat-Max | 3.1 V |