Part Details for MTW6N100E by Motorola Mobility LLC
Overview of MTW6N100E by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Space Technology
Environmental Monitoring
Internet of Things (IoT)
Smart Cities
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Consumer Electronics
Education and Research
Security and Surveillance
Aerospace and Defense
Healthcare
Robotics and Drones
Part Details for MTW6N100E
MTW6N100E CAD Models
MTW6N100E Part Data Attributes:
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MTW6N100E
Motorola Mobility LLC
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Datasheet
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MTW6N100E
Motorola Mobility LLC
6A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 720 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 6 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AE | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 18 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTW6N100E
This table gives cross-reference parts and alternative options found for MTW6N100E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTW6N100E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTW6N100E | 6A, 1000V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN | onsemi | MTW6N100E vs MTW6N100E |
| IRFPG50 | Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | MTW6N100E vs IRFPG50 |
| STW7NA100 | 7A, 1000V, 1.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | STMicroelectronics | MTW6N100E vs STW7NA100 |
| 2SK1120 | TRANSISTOR 8 A, 1000 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, 2-16C1B, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | MTW6N100E vs 2SK1120 |