Part Details for MTV32N20E by onsemi
Overview of MTV32N20E by onsemi
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for MTV32N20E
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73AK7436
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Newark | Mtv32N20E, Single Mosfets |Onsemi MTV32N20E Min Qty: 200 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.6900 / $2.0800 | Buy Now |
DISTI #
2156-MTV32N20E-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 161 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
6325 In Stock |
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$1.8700 | Buy Now |
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Rochester Electronics | 32A, 200V, 0.075ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 6325 |
|
$1.6100 / $1.8900 | Buy Now |
Part Details for MTV32N20E
MTV32N20E CAD Models
MTV32N20E Part Data Attributes:
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MTV32N20E
onsemi
Buy Now
Datasheet
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Compare Parts:
MTV32N20E
onsemi
32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 433-01, 2 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | CASE 433-01, 2 PIN | |
Pin Count | 2 | |
Manufacturer Package Code | CASE 433-01 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 810 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 32 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2 W | |
Pulsed Drain Current-Max (IDM) | 128 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for MTV32N20E
This table gives cross-reference parts and alternative options found for MTV32N20E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTV32N20E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MTV32N20E | 32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | MTV32N20E vs MTV32N20E |
MTV32N20E | 32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 433-01, 2 PIN | Rochester Electronics LLC | MTV32N20E vs MTV32N20E |
MTV32N20E-RL | 32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | MTV32N20E vs MTV32N20E-RL |