Datasheets
MTV32N20E by:

32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 433-01, 2 PIN

Part Details for MTV32N20E by onsemi

Overview of MTV32N20E by onsemi

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for MTV32N20E

Part # Distributor Description Stock Price Buy
DISTI # 73AK7436
Newark Mtv32N20E, Single Mosfets |Onsemi MTV32N20E Min Qty: 200 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $2.0800
  • 250 $1.7500
  • 500 $1.6900
$1.6900 / $2.0800 Buy Now
DISTI # 2156-MTV32N20E-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 161 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 6325
In Stock
  • 161 $1.8700
$1.8700 Buy Now
Rochester Electronics 32A, 200V, 0.075ohm, N-Channel Power MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 6325
  • 1 $1.8900
  • 25 $1.8500
  • 100 $1.7800
  • 500 $1.7000
  • 1,000 $1.6100
$1.6100 / $1.8900 Buy Now

Part Details for MTV32N20E

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MTV32N20E Part Data Attributes:

MTV32N20E onsemi
Buy Now Datasheet
Compare Parts:
MTV32N20E onsemi 32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 433-01, 2 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description CASE 433-01, 2 PIN
Pin Count 2
Manufacturer Package Code CASE 433-01
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 810 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2 W
Pulsed Drain Current-Max (IDM) 128 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MTV32N20E

This table gives cross-reference parts and alternative options found for MTV32N20E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTV32N20E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTV32N20E 32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTV32N20E vs MTV32N20E
MTV32N20E 32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 433-01, 2 PIN Rochester Electronics LLC MTV32N20E vs MTV32N20E
MTV32N20E-RL 32A, 200V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTV32N20E vs MTV32N20E-RL
Part Number Description Manufacturer Compare
SFF250ZDBS Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) MTV32N20E vs SFF250ZDBS
SFF250ZUBS Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) MTV32N20E vs SFF250ZUBS
SFF250ZTX Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) MTV32N20E vs SFF250ZTX
SFF250ZDBTX Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) MTV32N20E vs SFF250ZDBTX
SFF250ZDBTXV Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) MTV32N20E vs SFF250ZDBTXV
SFF250ZUB Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) MTV32N20E vs SFF250ZUB
SFF250ZS Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN Solid State Devices Inc (SSDI) MTV32N20E vs SFF250ZS
FQI34N20LTU Power Field-Effect Transistor, 31A I(D), 200V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, I2PAK-3 Fairchild Semiconductor Corporation MTV32N20E vs FQI34N20LTU
SSPL2090 Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Suzhou Good-Ark Electronics Co Ltd MTV32N20E vs SSPL2090
FQP34N20 Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220, 1000-TUBE onsemi MTV32N20E vs FQP34N20

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