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Transistors / Power Field-Effect Transistors / MTP6N60E
Datasheets
MTP6N60E by:
Motorola Mobility LLC
Freescale Semiconductor
Motorola Mobility LLC
Motorola Semiconductor Products
onsemi
Semiconductor Technology Inc
Not Found

6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for MTP6N60E by Motorola Mobility LLC

Results Overview of MTP6N60E by Motorola Mobility LLC

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

MTP6N60E Information

MTP6N60E by Motorola Mobility LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MTP6N60E

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MTP6N60E Part Data Attributes

Parametric Data
MTP6N60E Motorola Mobility LLC
Buy Now Datasheet
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MTP6N60E Motorola Mobility LLC 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 405 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 18 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MTP6N60E

This table gives cross-reference parts and alternative options found for MTP6N60E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP6N60E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFBC40PBF Vishay Siliconix Check for Price Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN MTP6N60E vs IRFBC40PBF
IRFBC40 Rochester Electronics LLC Check for Price 6.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN MTP6N60E vs IRFBC40
IRFBC40LC International Rectifier Check for Price Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB MTP6N60E vs IRFBC40LC
MTP6N60 STMicroelectronics Check for Price 6.8A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN MTP6N60E vs MTP6N60
MTP6N60E onsemi Check for Price 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN MTP6N60E vs MTP6N60E
IRFBC42 Harris Semiconductor Check for Price Power Field-Effect Transistor, 5.4A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN MTP6N60E vs IRFBC42
IRFBC42 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, MTP6N60E vs IRFBC42
Part Number Manufacturer Composite Price Description Compare
IRFBC40PBF International Rectifier Check for Price Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 MTP6N60E vs IRFBC40PBF
SSP7N60 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN MTP6N60E vs SSP7N60
2SK2027-01 Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN MTP6N60E vs 2SK2027-01
IRFBC40 International Rectifier Check for Price Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB MTP6N60E vs IRFBC40
SSP7N60 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN MTP6N60E vs SSP7N60
IRFBC42PBF Infineon Technologies AG Check for Price 5.5A, 600V, 1.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB MTP6N60E vs IRFBC42PBF
MTP6N55 Motorola Mobility LLC Check for Price 6A, 550V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB MTP6N60E vs MTP6N55
IRFBC40LCPBF Vishay Intertechnologies $0.8317 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 MTP6N60E vs IRFBC40LCPBF
IRFBC42PBF International Rectifier Check for Price Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB MTP6N60E vs IRFBC42PBF
IRFBC40 Vishay Siliconix Check for Price Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN MTP6N60E vs IRFBC40

MTP6N60E Related Parts

MTP6N60E Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the MTP6N60E is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. As a general rule, it's recommended to operate the device within the specified maximum ratings and avoid operating conditions that may cause excessive heat, voltage, or current stress.

  • To ensure proper biasing, follow the recommended operating conditions and biasing schemes outlined in the datasheet. Typically, this involves applying a suitable gate-source voltage (Vgs) and drain-source voltage (Vds) to achieve the desired on-state resistance and switching performance. Additionally, consider the device's threshold voltage (Vth) and ensure that the gate drive voltage is sufficient to fully enhance the device.

  • For optimal performance and reliability, follow good PCB layout practices, such as minimizing trace inductance, using a solid ground plane, and placing decoupling capacitors close to the device. Thermal management is also crucial; ensure good heat sinking, use thermal vias, and consider using a heat sink or thermal interface material to reduce junction temperature.

  • To protect the MTP6N60E from ESD and electrical overstress, follow proper handling and storage procedures, use ESD-safe materials and equipment, and implement ESD protection circuits or devices in the system design. Additionally, ensure that the device is properly connected to a low-impedance ground plane and consider using TVS diodes or other overvoltage protection devices.

  • The reliability and lifespan of the MTP6N60E depend on various factors, including operating conditions, environmental factors, and manufacturing quality. As a general guideline, the device is designed to meet or exceed the reliability standards specified in the datasheet. However, it's essential to follow proper design, manufacturing, and testing practices to ensure the device operates within its specified ratings and tolerances.