Part Details for MTP6N60 by STMicroelectronics
Overview of MTP6N60 by STMicroelectronics
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for MTP6N60
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 3298 |
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$1.8900 / $5.4000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 172 |
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$3.0420 / $7.0200 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 20 |
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$3.4100 / $4.6500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 43 |
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$3.6000 / $5.4000 | Buy Now |
Part Details for MTP6N60
MTP6N60 CAD Models
MTP6N60 Part Data Attributes:
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MTP6N60
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
MTP6N60
STMicroelectronics
6.8A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | STMICROELECTRONICS | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 460 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 6.8 A | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 110 pF | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-on Time-Max (ton) | 93 ns |
Alternate Parts for MTP6N60
This table gives cross-reference parts and alternative options found for MTP6N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP6N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFBC42 | Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | MTP6N60 vs IRFBC42 |
| IRFBC40LCPBF | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN | Vishay Siliconix | MTP6N60 vs IRFBC40LCPBF |
| SSP7N60 | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | MTP6N60 vs SSP7N60 |
| 2SK2027-01 | Power Field-Effect Transistor, 8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fuji Electric Co Ltd | MTP6N60 vs 2SK2027-01 |
| MTP6N60E | 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | MTP6N60 vs MTP6N60E |
| MTP6N55 | 6A, 550V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | MTP6N60 vs MTP6N55 |
| STP7NB60 | 7.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | MTP6N60 vs STP7NB60 |
| MTP6N60E | 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | onsemi | MTP6N60 vs MTP6N60E |
| IRFBC42PBF | Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | MTP6N60 vs IRFBC42PBF |
| BUK457-600B | TRANSISTOR 7.1 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | MTP6N60 vs BUK457-600B |