Part Details for MTP15N06V by Motorola Semiconductor Products
Overview of MTP15N06V by Motorola Semiconductor Products
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for MTP15N06V
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 9 |
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Buy Now | |
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Quest Components | 15 A, 60 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 71 |
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$2.4200 / $3.6300 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 3 |
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Buy Now |
Part Details for MTP15N06V
MTP15N06V CAD Models
MTP15N06V Part Data Attributes:
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MTP15N06V
Motorola Semiconductor Products
Buy Now
Datasheet
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Compare Parts:
MTP15N06V
Motorola Semiconductor Products
Power Field-Effect Transistor, 15A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 113 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 15 A | |
Drain-source On Resistance-Max | 0.12 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 60 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 55 W | |
Power Dissipation-Max (Abs) | 55 W | |
Pulsed Drain Current-Max (IDM) | 45 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 110 ns | |
Turn-on Time-Max (ton) | 120 ns |