Part Details for MTMC8E2A0LBF by Panasonic Electronic Components
Overview of MTMC8E2A0LBF by Panasonic Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for MTMC8E2A0LBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
53W8224
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Newark | Sc, Nch Power Mos Fet |Panasonic MTMC8E2A0LBF Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Chip1Cloud | MOSFET 2N-CH 20V 7A WMINI8 | 6000 |
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RFQ |
Part Details for MTMC8E2A0LBF
MTMC8E2A0LBF CAD Models
MTMC8E2A0LBF Part Data Attributes:
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MTMC8E2A0LBF
Panasonic Electronic Components
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Datasheet
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Compare Parts:
MTMC8E2A0LBF
Panasonic Electronic Components
Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, WMINI8-F1, SC-115, 8 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | PANASONIC CORP | |
| Package Description | SC-115, 8 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Panasonic | |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 7 A | |
| Drain-source On Resistance-Max | 0.033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |