Part Details for MTE215N10E by Motorola Mobility LLC
Overview of MTE215N10E by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Medical Imaging
Automotive
Robotics and Drones
Part Details for MTE215N10E
MTE215N10E CAD Models
MTE215N10E Part Data Attributes:
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MTE215N10E
Motorola Mobility LLC
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Datasheet
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MTE215N10E
Motorola Mobility LLC
215A, 100V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | FLANGE MOUNT, R-PUFM-D4 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 400 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 215 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-D4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 460 W | |
| Power Dissipation-Max (Abs) | 460 W | |
| Pulsed Drain Current-Max (IDM) | 860 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | SOLDER LUG | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTE215N10E
This table gives cross-reference parts and alternative options found for MTE215N10E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTE215N10E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXFE180N10 | Power Field-Effect Transistor, 176A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | MTE215N10E vs IXFE180N10 |
| APT10M07JVR | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | Microsemi Corporation | MTE215N10E vs APT10M07JVR |
| BUK416-100AE | TRANSISTOR 110 A, 100 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | MTE215N10E vs BUK416-100AE |
| IXFN200N10P | Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | IXYS Corporation | MTE215N10E vs IXFN200N10P |
| IXFN200N10P | Power Field-Effect Transistor, 200A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 | Littelfuse Inc | MTE215N10E vs IXFN200N10P |
| IXTN210P10T | Power Field-Effect Transistor, | Littelfuse Inc | MTE215N10E vs IXTN210P10T |
| BUK416-100BE | TRANSISTOR 100 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | NXP Semiconductors | MTE215N10E vs BUK416-100BE |
| APT10M07JVFR | Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 | Microsemi Corporation | MTE215N10E vs APT10M07JVFR |
| APT10M07JVFR | Power Field-Effect Transistor, 225A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | MTE215N10E vs APT10M07JVFR |
| IXFN150N10 | Power Field-Effect Transistor, 150A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | MTE215N10E vs IXFN150N10 |