Part Details for MTD3055V by Fairchild Semiconductor Corporation
Overview of MTD3055V by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MTD3055V
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | Power Field-Effect Transistor, 12A, 60V, 0.15ohm, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 3 |
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RFQ | |
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ComSIT USA | 12 AMPS, 60 VOLTS N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ |
Part Details for MTD3055V
MTD3055V CAD Models
MTD3055V Part Data Attributes
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MTD3055V
Fairchild Semiconductor Corporation
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Datasheet
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MTD3055V
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | DPAK | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 72 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.15 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 48 W | |
Pulsed Drain Current-Max (IDM) | 37 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for MTD3055V
This table gives cross-reference parts and alternative options found for MTD3055V. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD3055V, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MTD3055V | 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | MTD3055V vs MTD3055V |
MTD3055V | Power MOSFET 12 Amps, 60 Volts N-Channel DPAK, DPAK-3 / TO-252-3, 2500-REEL | onsemi | MTD3055V vs MTD3055V |