Datasheets
MTD3055V by:

Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

Part Details for MTD3055V by Fairchild Semiconductor Corporation

Overview of MTD3055V by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for MTD3055V

Part # Distributor Description Stock Price Buy
Rochester Electronics Power Field-Effect Transistor, 12A, 60V, 0.15ohm, N-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 3
RFQ
ComSIT USA 12 AMPS, 60 VOLTS N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Stock EU - 9043
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for MTD3055V

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MTD3055V Part Data Attributes

MTD3055V Fairchild Semiconductor Corporation
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MTD3055V Fairchild Semiconductor Corporation Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description DPAK-3
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 72 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 37 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MTD3055V

This table gives cross-reference parts and alternative options found for MTD3055V. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD3055V, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTD3055V 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC MTD3055V vs MTD3055V
MTD3055V Power MOSFET 12 Amps, 60 Volts N-Channel DPAK, DPAK-3 / TO-252-3, 2500-REEL onsemi MTD3055V vs MTD3055V
Part Number Description Manufacturer Compare
MTD3055V Power MOSFET 12 Amps, 60 Volts N-Channel DPAK, DPAK-3 / TO-252-3, 2500-REEL onsemi MTD3055V vs MTD3055V

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