Datasheets
MTD3055E by:

TRANSISTOR 8 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, FET General Purpose Power

Part Details for MTD3055E by National Semiconductor Corporation

Overview of MTD3055E by National Semiconductor Corporation

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for MTD3055E

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MTD3055E Part Data Attributes:

MTD3055E National Semiconductor Corporation
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MTD3055E National Semiconductor Corporation TRANSISTOR 8 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, FET General Purpose Power
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer NATIONAL SEMICONDUCTOR CORP
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 20 W
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for MTD3055E

This table gives cross-reference parts and alternative options found for MTD3055E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD3055E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RFD14N05SM Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation MTD3055E vs RFD14N05SM
2SK2018-01S Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(S), 3 PIN Fuji Electric Co Ltd MTD3055E vs 2SK2018-01S
MTD10N05E Power Field-Effect Transistor, 10A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 Motorola Semiconductor Products MTD3055E vs MTD10N05E
MTD3055E 8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Texas Instruments MTD3055E vs MTD3055E
RFD14N05SM9A Power Field-Effect Transistor, Rochester Electronics LLC MTD3055E vs RFD14N05SM9A
RFD14N05SM Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor MTD3055E vs RFD14N05SM
MTD8N06E 8A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 Motorola Mobility LLC MTD3055E vs MTD8N06E
SMD15N05 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Temic Semiconductors MTD3055E vs SMD15N05
MTD8N06E Power Field-Effect Transistor, 8A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3 Motorola Semiconductor Products MTD3055E vs MTD8N06E
MTD3055E 8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Motorola Mobility LLC MTD3055E vs MTD3055E
Part Number Description Manufacturer Compare
RFD14N05SM Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor MTD3055E vs RFD14N05SM
RFD14N05SM9A N-Channel Power MOSFET 50V, 14A, 100mΩ, 2500-REEL onsemi MTD3055E vs RFD14N05SM9A
RFD14N05SM Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation MTD3055E vs RFD14N05SM
RFD14N05SM9A Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation MTD3055E vs RFD14N05SM9A
MTD3055E 8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Texas Instruments MTD3055E vs MTD3055E
SMD15N05 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Temic Semiconductors MTD3055E vs SMD15N05
2SK2018-01S Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(S), 3 PIN Fuji Electric Co Ltd MTD3055E vs 2SK2018-01S

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