Datasheets
MTD20N06HDL by:

20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3

Part Details for MTD20N06HDL by onsemi

Overview of MTD20N06HDL by onsemi

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Price & Stock for MTD20N06HDL

Part # Distributor Description Stock Price Buy
Bristol Electronics   380
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-252AA 2
  • 1 $1.0500
$1.0500 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 39
  • 1 $3.5200
  • 10 $2.2000
  • 35 $1.9360
$1.9360 / $3.5200 Buy Now

Part Details for MTD20N06HDL

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MTD20N06HDL Part Data Attributes

MTD20N06HDL onsemi
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MTD20N06HDL onsemi 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code CASE 369C-01
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer onsemi
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 40 W
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MTD20N06HDL

This table gives cross-reference parts and alternative options found for MTD20N06HDL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD20N06HDL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STD20NE06T4 20A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 STMicroelectronics MTD20N06HDL vs STD20NE06T4
MTD20N06HDT4 Power MOSFET 20 Amps, 60 Volts, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi MTD20N06HDL vs MTD20N06HDT4
MTD20N06HDL 20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTD20N06HDL vs MTD20N06HDL
PHD20N06T TRANSISTOR 18 A, 55 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3, FET General Purpose Power NXP Semiconductors MTD20N06HDL vs PHD20N06T
MTD20N06HDLT4G 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369C-01, DPAK-3 onsemi MTD20N06HDL vs MTD20N06HDLT4G
PHD20N06T,118 PHD20N06T - N-channel TrenchMOS standard level FET DPAK 3-Pin NXP Semiconductors MTD20N06HDL vs PHD20N06T,118
MTD20N06HDT4 20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTD20N06HDL vs MTD20N06HDT4
MTD20N06HD 20A, 60V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTD20N06HDL vs MTD20N06HD
MTD20N06HDLT4 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi MTD20N06HDL vs MTD20N06HDLT4
PHD20N06T,118 PHD20N06T - N-channel TrenchMOS standard level FET@en-us DPAK 3-Pin Nexperia MTD20N06HDL vs PHD20N06T,118
Part Number Description Manufacturer Compare
BUZ71L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens MTD20N06HDL vs BUZ71L
HUF76429D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation MTD20N06HDL vs HUF76429D3ST
HUF75309P3 Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Fairchild Semiconductor Corporation MTD20N06HDL vs HUF75309P3
NTD18N06T4G Power MOSFET 60V 18A 60 mOhm Single N-Channel DPAK, DPAK (SINGLE GAUGE) TO-252, 2500-REEL onsemi MTD20N06HDL vs NTD18N06T4G
IRF9Z34NPBF Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 Infineon Technologies AG MTD20N06HDL vs IRF9Z34NPBF
BUZ71L 12A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTD20N06HDL vs BUZ71L
BUZ71S2 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens MTD20N06HDL vs BUZ71S2
FQB20N06L Power Field-Effect Transistor, 21A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation MTD20N06HDL vs FQB20N06L
FQD24N08TF Power Field-Effect Transistor, 19.6A I(D), 80V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation MTD20N06HDL vs FQD24N08TF
HUF76423D3ST Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation MTD20N06HDL vs HUF76423D3ST

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