Datasheets
MTBV30P06VT4G by: onsemi

Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK, D2PAK 2 LEAD, 800-REEL, Automotive Qualified

Part Details for MTBV30P06VT4G by onsemi

Overview of MTBV30P06VT4G by onsemi

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Applications Energy and Power Systems Renewable Energy Automotive

Part Details for MTBV30P06VT4G

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MTBV30P06VT4G Part Data Attributes

MTBV30P06VT4G onsemi
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MTBV30P06VT4G onsemi Power MOSFET -60V -30A 80 mOhm Single P-Channel D2PAK, D2PAK 2 LEAD, 800-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Part Package Code D2PAK 2 LEAD
Pin Count 3
Manufacturer Package Code 418B-04
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 450 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 310 pF
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 105 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 300 ns
Turn-on Time-Max (ton) 80 ns

Alternate Parts for MTBV30P06VT4G

This table gives cross-reference parts and alternative options found for MTBV30P06VT4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTBV30P06VT4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTB30P06VG TRANSISTOR 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 418B-04, D2PAK-3, FET General Purpose Power onsemi MTBV30P06VT4G vs MTB30P06VG
MTB30P06V 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 Rochester Electronics LLC MTBV30P06VT4G vs MTB30P06V
MTB30P06V 30A, 60V, 0.08ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 418B-04, D2PAK-3 onsemi MTBV30P06VT4G vs MTB30P06V
Part Number Description Manufacturer Compare
SPU30P06P 30A, 60V, 0.075ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT PACKAGE-3 Rochester Electronics LLC MTBV30P06VT4G vs SPU30P06P
IRFU5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, IPAK-3 International Rectifier MTBV30P06VT4G vs IRFU5305
UTT25P06G-TN3-R Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE PACKAGE-3 Unisonic Technologies Co Ltd MTBV30P06VT4G vs UTT25P06G-TN3-R
SPD30P06P-E4-E6327 Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT PACKAGE-3 Infineon Technologies AG MTBV30P06VT4G vs SPD30P06P-E4-E6327
UTT25P06G-TN3-T Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, Unisonic Technologies Co Ltd MTBV30P06VT4G vs UTT25P06G-TN3-T
IRFU5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 Infineon Technologies AG MTBV30P06VT4G vs IRFU5305PBF
UTT25P06L-TN3-T Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, Unisonic Technologies Co Ltd MTBV30P06VT4G vs UTT25P06L-TN3-T
SPD30P06PG Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG MTBV30P06VT4G vs SPD30P06PG
UTT25P06L-TN3-R Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE PACKAGE-3 Unisonic Technologies Co Ltd MTBV30P06VT4G vs UTT25P06L-TN3-R
AUIRFU5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, ROHS COMPLIANT, PLASTIC, IPAK-3 Infineon Technologies AG MTBV30P06VT4G vs AUIRFU5305

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