Part Details for MTB75N03HDL by Motorola Mobility LLC
Results Overview of MTB75N03HDL by Motorola Mobility LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MTB75N03HDL Information
MTB75N03HDL by Motorola Mobility LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MTB75N03HDL
MTB75N03HDL CAD Models
MTB75N03HDL Part Data Attributes
|
|
MTB75N03HDL
Motorola Mobility LLC
Buy Now
Datasheet
|
Compare Parts:
MTB75N03HDL
Motorola Mobility LLC
75A, 30V, 0.007ohm, N-CHANNEL, Si, POWER, MOSFET
Select a part to compare: |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MOTOROLA INC | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.007 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for MTB75N03HDL
This table gives cross-reference parts and alternative options found for MTB75N03HDL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTB75N03HDL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MTB75N03HDL | onsemi | Check for Price | 75A, 25V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 | MTB75N03HDL vs MTB75N03HDL |
MTB75N03HDL Frequently Asked Questions (FAQ)
-
The maximum operating temperature range for the MTB75N03HDL is -55°C to 150°C.
-
To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and avoiding thermal hotspots.
-
The recommended gate drive voltage for the MTB75N03HDL is between 10V and 15V, with a maximum gate-source voltage of ±20V.
-
Yes, the MTB75N03HDL is suitable for switching applications due to its low RDS(on) and high current capability. However, it's essential to ensure proper gate drive and layout to minimize switching losses and prevent overheating.
-
To protect the MTB75N03HDL from ESD, follow proper handling and storage procedures, use ESD-safe materials and equipment, and consider adding ESD protection devices, such as TVS diodes, to the circuit.