Datasheets
MTB50N06VLT4 by:
Motorola Semiconductor Products
Motorola Mobility LLC
Motorola Semiconductor Products
onsemi
Not Found

Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for MTB50N06VLT4 by Motorola Semiconductor Products

Results Overview of MTB50N06VLT4 by Motorola Semiconductor Products

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MTB50N06VLT4 Information

MTB50N06VLT4 by Motorola Semiconductor Products is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MTB50N06VLT4

Part # Distributor Description Stock Price Buy
ComSIT USA 60 VOLTS, 42 AMPS LOGIC LEVEL POWER MOSFET Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1... -Element, N-Channel, Silicon, Metal-oxide Semiconductor FET more RoHS: Not Compliant ECCN: EAR99 Stock DE - 1180
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for MTB50N06VLT4

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MTB50N06VLT4 Part Data Attributes

MTB50N06VLT4 Motorola Semiconductor Products
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MTB50N06VLT4 Motorola Semiconductor Products Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 265 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 147 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

MTB50N06VLT4 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the MTB50N06VLT4 is -55°C to 150°C.

  • The MTB50N06VLT4 is a logic-level MOSFET, which means it can be driven directly by a microcontroller or other low-voltage logic device.

  • The maximum current rating for the MTB50N06VLT4 is 50A, with a pulsed current rating of 100A.

  • Yes, the MTB50N06VLT4 is a fast-switching MOSFET with a rise time of 10ns and a fall time of 20ns, making it suitable for high-frequency switching applications.

  • The maximum voltage rating for the MTB50N06VLT4 is 60V, with a maximum drain-source voltage of 60V and a maximum gate-source voltage of ±20V.