Datasheets
MTB50N06VLT4 by:
Motorola Semiconductor Products
Motorola Mobility LLC
Motorola Semiconductor Products
onsemi
Not Found

Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Details for MTB50N06VLT4 by Motorola Semiconductor Products

Overview of MTB50N06VLT4 by Motorola Semiconductor Products

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Price & Stock for MTB50N06VLT4

Part # Distributor Description Stock Price Buy
ComSIT USA 60 VOLTS, 42 AMPS LOGIC LEVEL POWER MOSFET Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Not Compliant Stock EU - 1180
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ

Part Details for MTB50N06VLT4

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MTB50N06VLT4 Part Data Attributes

MTB50N06VLT4 Motorola Semiconductor Products
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MTB50N06VLT4 Motorola Semiconductor Products Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 265 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 42 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 147 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON