Part Details for MTB50N06VLT4 by Motorola Semiconductor Products
Results Overview of MTB50N06VLT4 by Motorola Semiconductor Products
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MTB50N06VLT4 Information
MTB50N06VLT4 by Motorola Semiconductor Products is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for MTB50N06VLT4
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
ComSIT USA | 60 VOLTS, 42 AMPS LOGIC LEVEL POWER MOSFET Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1... more RoHS: Not Compliant ECCN: EAR99 |
|
|
RFQ |
Part Details for MTB50N06VLT4
MTB50N06VLT4 CAD Models
MTB50N06VLT4 Part Data Attributes
|
MTB50N06VLT4
Motorola Semiconductor Products
Buy Now
Datasheet
|
Compare Parts:
MTB50N06VLT4
Motorola Semiconductor Products
Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Select a part to compare: |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 265 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 42 A | |
Drain-source On Resistance-Max | 0.032 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 147 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |