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Transistors Power Field-Effect Transistors MTB40N10E

MTB40N10E
Description: 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3

Overview of MTB40N10E by onsemi

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for MTB40N10E by onsemi

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   8
RFQ
Quest Components   6
  • 1 $50.0000
  • 6 $47.5000
$47.5000 / $50.0000 Buy Now

CAD Models for MTB40N10E by onsemi
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Part Data Attributes for MTB40N10E by onsemi
Parametric Data

MTB40N10E
onsemi
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
ON SEMICONDUCTOR
Package Description
D2PAK-3
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
800 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
40 A
Drain-source On Resistance-Max
0.04 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
235
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
169 W
Pulsed Drain Current-Max (IDM)
140 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. MTB40N10E
    onsemi
    40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
    VS

Alternate Parts for MTB40N10E

This table gives cross-reference parts and alternative options found for MTB40N10E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTB40N10E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MTB40N10ET4 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 onsemi MTB40N10E vs MTB40N10ET4
Part Number Description Manufacturer Compare
IRF543 Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor MTB40N10E vs IRF543
IRF541-001 Power Field-Effect Transistor, 28A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MTB40N10E vs IRF541-001
IRF543-006 Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MTB40N10E vs IRF543-006
IRF541 28A, 80V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics MTB40N10E vs IRF541
BUK555-100A 25A, 100V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, TO-220AB, 3 PIN NXP Semiconductors MTB40N10E vs BUK555-100A
IRF543 25A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation MTB40N10E vs IRF543
IRF542 Power Field-Effect Transistor, 24A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products MTB40N10E vs IRF542
IRF542 POWER, FET National Semiconductor Corporation MTB40N10E vs IRF542
IRF540PBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier MTB40N10E vs IRF540PBF
IRF541 Power Field-Effect Transistor, 27A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products MTB40N10E vs IRF541

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