Datasheets
MTB36N06V by:

32A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3

Part Details for MTB36N06V by onsemi

Overview of MTB36N06V by onsemi

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Price & Stock for MTB36N06V

Part # Distributor Description Stock Price Buy
Quest Components MOSFET Transistor, N-Channel, TO-263AB 19
  • 1 $1.5000
  • 4 $1.3800
  • 19 $1.2000
$1.2000 / $1.5000 Buy Now

Part Details for MTB36N06V

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MTB36N06V Part Data Attributes

MTB36N06V onsemi
Buy Now Datasheet
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MTB36N06V onsemi 32A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Manufacturer Package Code CASE 418B-03
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 205 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 32 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 235
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 90 W
Pulsed Drain Current-Max (IDM) 112 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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