Part Details for MTB2P50ET4G by onsemi
Overview of MTB2P50ET4G by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Electronic Manufacturing
Price & Stock for MTB2P50ET4G
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
09R9555
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Newark | P Channel Mosfet, -500V, 2A, D2-Pak, Channel Type:P Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:2A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Onsemi MTB2P50ET4G Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Part Details for MTB2P50ET4G
MTB2P50ET4G CAD Models
MTB2P50ET4G Part Data Attributes:
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MTB2P50ET4G
onsemi
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Datasheet
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MTB2P50ET4G
onsemi
Power MOSFET -500V -2A 6 Ohm Single P-Channel D2PAK, D2PAK 2 LEAD, 800-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Part Package Code | D2PAK 2 LEAD | |
Package Description | LEAD FREE, CASE 418B-04, D2PAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | 418B-04 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Samacsys Manufacturer | onsemi | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 2 A | |
Drain-source On Resistance-Max | 6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 75 W | |
Pulsed Drain Current-Max (IDM) | 6 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for MTB2P50ET4G
This table gives cross-reference parts and alternative options found for MTB2P50ET4G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTB2P50ET4G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MTB2P50ET4 | 2A, 500V, 6ohm, P-CHANNEL, Si, POWER, MOSFET | Motorola Mobility LLC | MTB2P50ET4G vs MTB2P50ET4 |