Datasheets
MTB15N06VT4 by:
Motorola Mobility LLC
Freescale Semiconductor
Motorola Mobility LLC
Motorola Semiconductor Products
onsemi
Rochester Electronics LLC
Not Found

15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for MTB15N06VT4 by Motorola Mobility LLC

Results Overview of MTB15N06VT4 by Motorola Mobility LLC

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MTB15N06VT4 Information

MTB15N06VT4 by Motorola Mobility LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for MTB15N06VT4

Part # Distributor Description Stock Price Buy
Rochester Electronics Trans MOSFET N-CH 60V 15A 3-Pin(2+Tab) D2PAK T/R RoHS: Not Compliant Status: Obsolete Min Qty: 1 800
  • 1 $0.6176
  • 25 $0.6052
  • 100 $0.5805
  • 500 $0.5558
  • 1,000 $0.5250
$0.5250 / $0.6176 Buy Now

Part Details for MTB15N06VT4

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MTB15N06VT4 Part Data Attributes

MTB15N06VT4 Motorola Mobility LLC
Buy Now Datasheet
Compare Parts:
MTB15N06VT4 Motorola Mobility LLC 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 113 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 60 pF
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 55 W
Power Dissipation-Max (Abs) 55 W
Pulsed Drain Current-Max (IDM) 45 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 110 ns
Turn-on Time-Max (ton) 120 ns

Alternate Parts for MTB15N06VT4

This table gives cross-reference parts and alternative options found for MTB15N06VT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTB15N06VT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MTB15N06VT4 Rochester Electronics LLC Check for Price 15A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-02, D2PAK-3 MTB15N06VT4 vs MTB15N06VT4
Part Number Manufacturer Composite Price Description Compare
MTB15N06VT4 Motorola Semiconductor Products Check for Price Power Field-Effect Transistor, 15A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET MTB15N06VT4 vs MTB15N06VT4