Datasheets
MTA4ATF25664HZ-2G6B1 by: Micron Technology Inc

DDR DRAM Module, 256MX64, CMOS, HALOGEN FREE, SODIMM-260

Part Details for MTA4ATF25664HZ-2G6B1 by Micron Technology Inc

Overview of MTA4ATF25664HZ-2G6B1 by Micron Technology Inc

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Part Details for MTA4ATF25664HZ-2G6B1

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MTA4ATF25664HZ-2G6B1 Part Data Attributes:

MTA4ATF25664HZ-2G6B1 Micron Technology Inc
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MTA4ATF25664HZ-2G6B1 Micron Technology Inc DDR DRAM Module, 256MX64, CMOS, HALOGEN FREE, SODIMM-260
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Package Description DIMM,
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Mode SINGLE BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH; WD-MAX
JESD-30 Code R-XZMA-N260
Length 69.6 mm
Memory Density 17179869184 bit
Memory IC Type DDR DRAM MODULE
Memory Width 64
Number of Functions 1
Number of Ports 1
Number of Terminals 260
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min
Organization 256MX64
Package Body Material UNSPECIFIED
Package Code DIMM
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) NOT SPECIFIED
Seated Height-Max 30.13 mm
Self Refresh YES
Supply Voltage-Max (Vsup) 1.26 V
Supply Voltage-Min (Vsup) 1.14 V
Supply Voltage-Nom (Vsup) 1.2 V
Surface Mount NO
Technology CMOS
Temperature Grade OTHER
Terminal Form NO LEAD
Terminal Position ZIG-ZAG
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 2.5 mm

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