Datasheets
MTA3055E by:
Freescale Semiconductor
Freescale Semiconductor
Motorola Mobility LLC
Motorola Semiconductor Products
onsemi
Not Found

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,9A I(D),SOT-186

Part Details for MTA3055E by Freescale Semiconductor

Results Overview of MTA3055E by Freescale Semiconductor

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

MTA3055E Information

MTA3055E by Freescale Semiconductor is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for MTA3055E

MTA3055E CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

MTA3055E Part Data Attributes

MTA3055E Freescale Semiconductor
Buy Now Datasheet
Compare Parts:
MTA3055E Freescale Semiconductor TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,9A I(D),SOT-186
Select a part to compare:
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA SEMICONDUCTOR PRODUCTS
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection ISOLATED
Configuration Single
DS Breakdown Voltage-Min 60 V
Drain Current-Max (Abs) (ID) 9 A
Drain Current-Max (ID) 10 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 33 W
Power Dissipation-Max (Abs) 30 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON