Part Details for MT8VDDT3264AG-335G6 by Micron Technology Inc
Overview of MT8VDDT3264AG-335G6 by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MT8VDDT3264AG-335G6
MT8VDDT3264AG-335G6 CAD Models
MT8VDDT3264AG-335G6 Part Data Attributes
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MT8VDDT3264AG-335G6
Micron Technology Inc
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Datasheet
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MT8VDDT3264AG-335G6
Micron Technology Inc
DDR DRAM Module, 32MX64, 0.7ns, CMOS, PDMA184
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.36 | |
| Access Time-Max | 0.7 ns | |
| Clock Frequency-Max (fCLK) | 167 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PDMA-N184 | |
| Memory Density | 2147483648 bit | |
| Memory IC Type | DDR DRAM MODULE | |
| Memory Width | 64 | |
| Number of Terminals | 184 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX64 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | DIMM | |
| Package Equivalence Code | DIMM184 | |
| Package Shape | RECTANGULAR | |
| Package Style | MICROELECTRONIC ASSEMBLY | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Standby Current-Max | 0.032 A | |
| Supply Current-Max | 3.28 mA | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | NO | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | NO LEAD | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL |
Alternate Parts for MT8VDDT3264AG-335G6
This table gives cross-reference parts and alternative options found for MT8VDDT3264AG-335G6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT8VDDT3264AG-335G6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| M2Y25664DSH4B1G-5T | DDR DRAM Module, 32MX64, CMOS, GREEN, DIMM-184 | Nanya Technology Corporation | MT8VDDT3264AG-335G6 vs M2Y25664DSH4B1G-5T |
| HYMD232M646AL6-D43 | DDR DRAM Module, 32MX64, 0.7ns, CMOS, SODIMM-200 | SK Hynix Inc | MT8VDDT3264AG-335G6 vs HYMD232M646AL6-D43 |
| SM5643285D4N0CG | DDR DRAM Module, 32MX64, 0.8ns, CMOS, DIMM-184 | SMART Modular Technology Inc | MT8VDDT3264AG-335G6 vs SM5643285D4N0CG |
| HYMD232M646A8-L | DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200 | SK Hynix Inc | MT8VDDT3264AG-335G6 vs HYMD232M646A8-L |
| HYMD232M646CL6-L | DDR DRAM Module, 32MX64, 0.8ns, CMOS, SODIMM-200 | SK Hynix Inc | MT8VDDT3264AG-335G6 vs HYMD232M646CL6-L |
| IBM16M32644HGA-10HT | DDR DRAM Module, 32MX64, 0.8ns, CMOS, GOLD CONTACTS, DIMM-184 | IBM | MT8VDDT3264AG-335G6 vs IBM16M32644HGA-10HT |
| M368L3324BUM-CB0 | DDR DRAM Module, 32MX64, 0.75ns, CMOS, ROHS COMPLIANT, DIMM-184 | Samsung Semiconductor | MT8VDDT3264AG-335G6 vs M368L3324BUM-CB0 |
| W3EG6437S403D4M | DDR DRAM Module, 32MX64, 0.7ns, CMOS, SO-DIMM-200 | Microsemi Corporation | MT8VDDT3264AG-335G6 vs W3EG6437S403D4M |
| V826732J24SATG-D3 | DDR DRAM Module, 32MX64, 0.7ns, CMOS, DIMM-184 | ProMOS Technologies Inc | MT8VDDT3264AG-335G6 vs V826732J24SATG-D3 |
| MT8HTF3264HTY-40EXX | DDR DRAM Module, 32MX64, CMOS, LEAD FREE, SODIMM-200 | Micron Technology Inc | MT8VDDT3264AG-335G6 vs MT8HTF3264HTY-40EXX |