Part Details for MT8LSDT3264HG-10E by Micron Technology Inc
Overview of MT8LSDT3264HG-10E by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MT8LSDT3264HG-10E
MT8LSDT3264HG-10E CAD Models
MT8LSDT3264HG-10E Part Data Attributes:
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MT8LSDT3264HG-10E
Micron Technology Inc
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Datasheet
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MT8LSDT3264HG-10E
Micron Technology Inc
Synchronous DRAM Module, 32MX64, 6ns, CMOS, PDMA144,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Access Time-Max | 6 ns | |
Clock Frequency-Max (fCLK) | 125 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-PDMA-N144 | |
Memory Density | 2147483648 bit | |
Memory IC Type | SYNCHRONOUS DRAM MODULE | |
Memory Width | 64 | |
Moisture Sensitivity Level | 1 | |
Number of Terminals | 144 | |
Number of Words | 33554432 words | |
Number of Words Code | 32000000 | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 32MX64 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | DIMM | |
Package Equivalence Code | DIMM144,32 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Standby Current-Max | 0.016 A | |
Supply Current-Max | 2.16 mA | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | NO | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | NO LEAD | |
Terminal Pitch | 0.8 mm | |
Terminal Position | DUAL |
Alternate Parts for MT8LSDT3264HG-10E
This table gives cross-reference parts and alternative options found for MT8LSDT3264HG-10E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT8LSDT3264HG-10E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MH32S64APFB-6L | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, DIMM-144 | Mitsubishi Electric | MT8LSDT3264HG-10E vs MH32S64APFB-6L |
WED3DG6432V7D1 | Synchronous DRAM Module, 32MX64, CMOS, SODIMM-144 | Microsemi Corporation | MT8LSDT3264HG-10E vs WED3DG6432V7D1 |
MT16LSDF32264LHG-133B1 | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, SODIMM-144 | Micron Technology Inc | MT8LSDT3264HG-10E vs MT16LSDF32264LHG-133B1 |
W3DG6433V10D1 | Synchronous DRAM Module, 32MX64, CMOS, SODIMM-144 | Microsemi Corporation | MT8LSDT3264HG-10E vs W3DG6433V10D1 |
HYM72V32M636T6M-H | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, SODIMM-144 | SK Hynix Inc | MT8LSDT3264HG-10E vs HYM72V32M636T6M-H |
M464S3254AT1-C1L | Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144 | Samsung Semiconductor | MT8LSDT3264HG-10E vs M464S3254AT1-C1L |
M464S3254CTS-LIL | Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144 | Samsung Semiconductor | MT8LSDT3264HG-10E vs M464S3254CTS-LIL |
M464S3254DTS-C7A | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, SODIMM-144 | Samsung Semiconductor | MT8LSDT3264HG-10E vs M464S3254DTS-C7A |
HYM72V32M656ALT6-8 | Synchronous DRAM Module, 32MX64, 6ns, CMOS, SODIMM-144 | SK Hynix Inc | MT8LSDT3264HG-10E vs HYM72V32M656ALT6-8 |
V436632Y24VATG-75 | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, SODIMM-144 | Mosel Vitelic Corporation | MT8LSDT3264HG-10E vs V436632Y24VATG-75 |