Datasheets
MT8HTF12864HY-40E by: Micron Technology Inc

DDR DRAM Module, 128MX64, 0.6ns, CMOS, PDMA200,

Part Details for MT8HTF12864HY-40E by Micron Technology Inc

Overview of MT8HTF12864HY-40E by Micron Technology Inc

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Applications Consumer Electronics Computing and Data Storage

Part Details for MT8HTF12864HY-40E

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MT8HTF12864HY-40E Part Data Attributes:

MT8HTF12864HY-40E Micron Technology Inc
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MT8HTF12864HY-40E Micron Technology Inc DDR DRAM Module, 128MX64, 0.6ns, CMOS, PDMA200,
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICRON TECHNOLOGY INC
Package Description DIMM, DIMM200,24
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.36
Access Time-Max 0.6 ns
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
JESD-30 Code R-PDMA-N200
Memory Density 8589934592 bit
Memory IC Type DDR DRAM MODULE
Memory Width 64
Number of Terminals 200
Number of Words 134217728 words
Number of Words Code 128000000
Operating Temperature-Max 65 °C
Operating Temperature-Min
Organization 128MX64
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code DIMM
Package Equivalence Code DIMM200,24
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 8192
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 0.6 mm
Terminal Position DUAL

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