Part Details for MT6L55S by Toshiba America Electronic Components
Results Overview of MT6L55S by Toshiba America Electronic Components
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MT6L55S Information
MT6L55S by Toshiba America Electronic Components is an RF Small Signal Bipolar Transistor.
RF Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for MT6L55S
MT6L55S CAD Models
MT6L55S Part Data Attributes
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MT6L55S
Toshiba America Electronic Components
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Datasheet
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MT6L55S
Toshiba America Electronic Components
TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, 2-2Q1A, 6 PIN, BIP RF Small Signal
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | TOSHIBA CORP | |
Package Description | SMALL OUTLINE, R-PDSO-F6 | |
Pin Count | 6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.005 A | |
Collector-Base Capacitance-Max | 0.85 pF | |
Collector-Emitter Voltage-Max | 25 V | |
Configuration | SEPARATE, 2 ELEMENTS | |
DC Current Gain-Min (hFE) | 70 | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PDSO-F6 | |
JESD-609 Code | e0 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Temperature-Max | 125 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.15 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 12000 MHz |