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DDR DRAM, 1GX32, CMOS, FBGA
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MT53D1024M32D4DT-046AAT:D by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
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Quest Components | LPDDR4 DRAM, 1GX32, CMOS, PBGA200 | 16 |
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$29.1200 | Buy Now |
|
Vyrian | Memory ICs | 466 |
|
RFQ |
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MT53D1024M32D4DT-046AAT:D
Micron Technology Inc
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Datasheet
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MT53D1024M32D4DT-046AAT:D
Micron Technology Inc
DDR DRAM, 1GX32, CMOS, FBGA
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Package Description | FBGA-200 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Date Of Intro | 2019-11-26 | |
Samacsys Manufacturer | Micron | |
Access Mode | MULTI BANK PAGE BURST | |
Additional Feature | SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX | |
Clock Frequency-Max (fCLK) | 2136.7 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 16,32 | |
JESD-30 Code | R-PBGA-B200 | |
Length | 14.5 mm | |
Memory Density | 34359738368 bit | |
Memory IC Type | LPDDR4 DRAM | |
Memory Width | 32 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 200 | |
Number of Words | 1073741824 words | |
Number of Words Code | 1000000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 105 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 1GX32 | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | VFBGA | |
Package Equivalence Code | BGA200,12X22,32/25 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Screening Level | AEC-Q100 | |
Seated Height-Max | 0.95 mm | |
Self Refresh | YES | |
Sequential Burst Length | 16,32 | |
Supply Voltage-Max (Vsup) | 1.17 V | |
Supply Voltage-Min (Vsup) | 1.06 V | |
Supply Voltage-Nom (Vsup) | 1.1 V | |
Surface Mount | YES | |
Technology | CMOS | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Width | 10 mm |