Datasheets
MT4LSDT1664AG-10E by: Micron Technology Inc

Synchronous DRAM Module, 16MX64, 6ns, CMOS, PDMA168

Part Details for MT4LSDT1664AG-10E by Micron Technology Inc

Overview of MT4LSDT1664AG-10E by Micron Technology Inc

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Part Details for MT4LSDT1664AG-10E

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MT4LSDT1664AG-10E Part Data Attributes:

MT4LSDT1664AG-10E Micron Technology Inc
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MT4LSDT1664AG-10E Micron Technology Inc Synchronous DRAM Module, 16MX64, 6ns, CMOS, PDMA168
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Time-Max 6 ns
Clock Frequency-Max (fCLK) 125 MHz
I/O Type COMMON
JESD-30 Code R-PDMA-N168
Memory Density 1073741824 bit
Memory IC Type SYNCHRONOUS DRAM MODULE
Memory Width 64
Number of Terminals 168
Number of Words 16777216 words
Number of Words Code 16000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX64
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code DIMM
Package Equivalence Code DIMM168
Package Shape RECTANGULAR
Package Style MICROELECTRONIC ASSEMBLY
Qualification Status Not Qualified
Refresh Cycles 8192
Standby Current-Max 0.008 A
Supply Current-Max 1.08 mA
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount NO
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form NO LEAD
Terminal Pitch 1.27 mm
Terminal Position DUAL

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