Part Details for MT4LC2M8E7TG-5STR by Micron Technology Inc
Overview of MT4LC2M8E7TG-5STR by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
2SK2925STR-E | Renesas Electronics Corporation | Nch Single Power Mosfet 60V 10A 80Mohm DPAK(S)/To-252 | |
2SK2735STR-E | Renesas Electronics Corporation | Nch Single Power Mosfet 30V 20A 28Mohm DPAK(S)/To-252 | |
2SK3135STR-E | Renesas Electronics Corporation | Nch Single Power Mosfet 60V 75A 7.5Mohm LDPAK(S)-(1)/To-263 |
Part Details for MT4LC2M8E7TG-5STR
MT4LC2M8E7TG-5STR CAD Models
MT4LC2M8E7TG-5STR Part Data Attributes
|
MT4LC2M8E7TG-5STR
Micron Technology Inc
Buy Now
Datasheet
|
Compare Parts:
MT4LC2M8E7TG-5STR
Micron Technology Inc
EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP-28
|
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Part Package Code | TSOP | |
Package Description | TSOP2, | |
Pin Count | 28 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Access Mode | FAST PAGE WITH EDO | |
Access Time-Max | 50 ns | |
Additional Feature | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH | |
JESD-30 Code | R-PDSO-G28 | |
JESD-609 Code | e0 | |
Length | 18.41 mm | |
Memory Density | 16777216 bit | |
Memory IC Type | EDO DRAM | |
Memory Width | 8 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 28 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | ASYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 2MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TSOP2 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, THIN PROFILE | |
Qualification Status | Not Qualified | |
Refresh Cycles | 2048 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Width | 7.67 mm |
Alternate Parts for MT4LC2M8E7TG-5STR
This table gives cross-reference parts and alternative options found for MT4LC2M8E7TG-5STR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT4LC2M8E7TG-5STR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
K4E160812D-FL500 | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, TSOP2-28 | Samsung Semiconductor | MT4LC2M8E7TG-5STR vs K4E160812D-FL500 |
K4E160812C-FC500 | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | MT4LC2M8E7TG-5STR vs K4E160812C-FC500 |
K4E170812C-FC50 | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | MT4LC2M8E7TG-5STR vs K4E170812C-FC50 |
K4E170812C-FC500 | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | MT4LC2M8E7TG-5STR vs K4E170812C-FC500 |
K4E160812C-FC50 | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | MT4LC2M8E7TG-5STR vs K4E160812C-FC50 |
KM48V2104CS-5 | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | MT4LC2M8E7TG-5STR vs KM48V2104CS-5 |
K4E170812D-FC50 | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, TSOP2-28 | Samsung Semiconductor | MT4LC2M8E7TG-5STR vs K4E170812D-FC50 |
K4E160812C-FL500 | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | MT4LC2M8E7TG-5STR vs K4E160812C-FL500 |
K4E170812C-FL500 | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP2-28 | Samsung Semiconductor | MT4LC2M8E7TG-5STR vs K4E170812C-FL500 |
MT4LC2M8E7TG-5 | EDO DRAM, 2MX8, 50ns, CMOS, PDSO28, 0.300 INCH, PLASTIC, TSOP-28 | Micron Technology Inc | MT4LC2M8E7TG-5STR vs MT4LC2M8E7TG-5 |