Datasheets
MT49H64M9BM-33IT:A by: Micron Technology Inc

DDR DRAM, 64MX9, 20ns, CMOS, PBGA144, LEAD FREE, UBGA-144

Part Details for MT49H64M9BM-33IT:A by Micron Technology Inc

Overview of MT49H64M9BM-33IT:A by Micron Technology Inc

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for MT49H64M9BM-33IT:A

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MT49H64M9BM-33IT:A Part Data Attributes

MT49H64M9BM-33IT:A Micron Technology Inc
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MT49H64M9BM-33IT:A Micron Technology Inc DDR DRAM, 64MX9, 20ns, CMOS, PBGA144, LEAD FREE, UBGA-144
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description LEAD FREE, UBGA-144
Pin Count 144
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode MULTI BANK PAGE BURST
Access Time-Max 20 ns
Additional Feature AUTO REFRESH
Clock Frequency-Max (fCLK) 300 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B144
JESD-609 Code e1
Length 18.5 mm
Memory Density 603979776 bit
Memory IC Type DDR DRAM
Memory Width 9
Number of Functions 1
Number of Ports 1
Number of Terminals 144
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 64MX9
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Equivalence Code BGA144,12X18,40/32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE
Qualification Status Not Qualified
Seated Height-Max 1.2 mm
Sequential Burst Length 2,4,8
Standby Current-Max 0.048 A
Supply Current-Max 0.819 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 11 mm

Alternate Parts for MT49H64M9BM-33IT:A

This table gives cross-reference parts and alternative options found for MT49H64M9BM-33IT:A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT49H64M9BM-33IT:A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS49NLC96400-33BLI DDR DRAM, 64MX9, 3.3ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 Integrated Silicon Solution Inc MT49H64M9BM-33IT:A vs IS49NLC96400-33BLI
IS49NLC96400-33BI DDR DRAM, 64MX9, 3.3ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 Integrated Silicon Solution Inc MT49H64M9BM-33IT:A vs IS49NLC96400-33BI
MT49H64M9HU-33IT:A DDR DRAM, 64MX9, 20ns, CMOS, PBGA144, FBGA-144 Micron Technology Inc MT49H64M9BM-33IT:A vs MT49H64M9HU-33IT:A
MT49H64M9HT-33IT:A DDR DRAM, 64MX9, 20ns, CMOS, PBGA144, LEAD FREE, FBGA-144 Micron Technology Inc MT49H64M9BM-33IT:A vs MT49H64M9HT-33IT:A
MT49H64M9FM-33EIT DDR DRAM, 64MX9, 0.25ns, CMOS, PBGA144, 11 X 18.50 MM, MICRO, BGA-144 Micron Technology Inc MT49H64M9BM-33IT:A vs MT49H64M9FM-33EIT
MT49H64M9FM-33IT:A DDR DRAM, 64MX9, 20ns, CMOS, PBGA144, UBGA-144 Micron Technology Inc MT49H64M9BM-33IT:A vs MT49H64M9FM-33IT:A
Part Number Description Manufacturer Compare
GS4576S09L-33 DDR DRAM, 64MX9, CMOS, PBGA144, UBGA-144 GSI Technology MT49H64M9BM-33IT:A vs GS4576S09L-33
IS49NLC96400-33BLI DDR DRAM, 64MX9, 3.3ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 Integrated Silicon Solution Inc MT49H64M9BM-33IT:A vs IS49NLC96400-33BLI
IS49NLC96400-33B DDR DRAM, 64MX9, 3.3ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144 Integrated Silicon Solution Inc MT49H64M9BM-33IT:A vs IS49NLC96400-33B
GS4576C09GM-33IT DDR DRAM, GSI Technology MT49H64M9BM-33IT:A vs GS4576C09GM-33IT
IS49NLC96400-33BL DDR DRAM, 64MX9, 3.3ns, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, FBGA-144 Integrated Silicon Solution Inc MT49H64M9BM-33IT:A vs IS49NLC96400-33BL
GS4576C09L-18I DDR DRAM, 64MX9, CMOS, PBGA144, UBGA-144 GSI Technology MT49H64M9BM-33IT:A vs GS4576C09L-18I
GS4576C09GM-24IT DDR DRAM, GSI Technology MT49H64M9BM-33IT:A vs GS4576C09GM-24IT
MT49H64M9BM-33EIT DDR DRAM, 64MX9, CMOS, PBGA144, 11 X 18.50 MM, LEAD FREE, MICRO, BGA-144 Micron Technology Inc MT49H64M9BM-33IT:A vs MT49H64M9BM-33EIT
MT49H64M9FM-25E:B DDR DRAM, 64MX9, 15ns, CMOS, PBGA144, UBGA-144 Micron Technology Inc MT49H64M9BM-33IT:A vs MT49H64M9FM-25E:B
GS4576C09GM-24 DDR DRAM, GSI Technology MT49H64M9BM-33IT:A vs GS4576C09GM-24

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