Part Details for MT48V8M16LFB4-8XT by Micron Technology Inc
Results Overview of MT48V8M16LFB4-8XT by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MT48V8M16LFB4-8XT Information
MT48V8M16LFB4-8XT by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for MT48V8M16LFB4-8XT
MT48V8M16LFB4-8XT CAD Models
MT48V8M16LFB4-8XT Part Data Attributes
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MT48V8M16LFB4-8XT
Micron Technology Inc
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Datasheet
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MT48V8M16LFB4-8XT
Micron Technology Inc
Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, VFBGA-54
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | BGA | |
| Package Description | VFBGA, BGA54,9X9,32 | |
| Pin Count | 54 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 125 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | S-PBGA-B54 | |
| JESD-609 Code | e1 | |
| Length | 8 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 16 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 54 | |
| Number of Words | 8388608 words | |
| Number of Words Code | 8000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 75 °C | |
| Operating Temperature-Min | -25 °C | |
| Organization | 8MX16 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | VFBGA | |
| Package Equivalence Code | BGA54,9X9,32 | |
| Package Shape | SQUARE | |
| Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.00045 A | |
| Supply Current-Max | 0.21 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL EXTENDED | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for MT48V8M16LFB4-8XT
This table gives cross-reference parts and alternative options found for MT48V8M16LFB4-8XT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48V8M16LFB4-8XT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| K4M28163LH-RF1L0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, FBGA-54 | MT48V8M16LFB4-8XT vs K4M28163LH-RF1L0 |
| K4S28163LD-BP1L | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, CSP-54 | MT48V8M16LFB4-8XT vs K4S28163LD-BP1L |
| MT48V8M16LFBF-8 | Micron Technology Inc | Check for Price | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 8 X 9 MM, LEAD FREE, FBGA-54 | MT48V8M16LFB4-8XT vs MT48V8M16LFBF-8 |
| K4M28163LH-RG1L0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, FBGA-54 | MT48V8M16LFB4-8XT vs K4M28163LH-RG1L0 |
| K4M56163DG-BG1L0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | MT48V8M16LFB4-8XT vs K4M56163DG-BG1L0 |
| K4S28163LD-BP1H | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, CSP-54 | MT48V8M16LFB4-8XT vs K4S28163LD-BP1H |
| K4M56163DG-BF1L0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | MT48V8M16LFB4-8XT vs K4M56163DG-BF1L0 |
| K4M28163LF-BL1L0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 | MT48V8M16LFB4-8XT vs K4M28163LF-BL1L0 |
| K4M28163LF-RC1H0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54 | MT48V8M16LFB4-8XT vs K4M28163LF-RC1H0 |
| K4M28163LH-RG1H0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54, FBGA-54 | MT48V8M16LFB4-8XT vs K4M28163LH-RG1H0 |