Datasheets
MT48LC4M32B2B5-6:G by:

Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90

Part Details for MT48LC4M32B2B5-6:G by Micron Technology Inc

Overview of MT48LC4M32B2B5-6:G by Micron Technology Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage Entertainment and Gaming

Price & Stock for MT48LC4M32B2B5-6:G

Part # Distributor Description Stock Price Buy
Quest Components IC,SDRAM,4X1MX32,CMOS,BGA,90PIN,PLASTIC 151
  • 1 $12.3750
  • 24 $10.1750
  • 99 $9.6250
$9.6250 / $12.3750 Buy Now
NexGen Digital   124
RFQ
Chip1Cloud DRAM Chip SDRAM 128Mbit 4Mx32 3.3V 90-Pin VFBGA Tray / IC SDRAM 128MBIT 167MHZ 90VFBGA 1410
RFQ

Part Details for MT48LC4M32B2B5-6:G

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MT48LC4M32B2B5-6:G Part Data Attributes:

MT48LC4M32B2B5-6:G Micron Technology Inc
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MT48LC4M32B2B5-6:G Micron Technology Inc Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description VFBGA, BGA90,9X15,32
Pin Count 90
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Samacsys Manufacturer Micron
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B90
JESD-609 Code e1
Length 13 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 32
Number of Functions 1
Number of Ports 1
Number of Terminals 90
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX32
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Equivalence Code BGA90,9X15,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.32 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for MT48LC4M32B2B5-6:G

This table gives cross-reference parts and alternative options found for MT48LC4M32B2B5-6:G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48LC4M32B2B5-6:G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT48LC4M32B2B5-6AT:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc MT48LC4M32B2B5-6:G vs MT48LC4M32B2B5-6AT:G
MT48LC4M32B2F5-6ES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc MT48LC4M32B2B5-6:G vs MT48LC4M32B2F5-6ES:G
MT48LC4M32B2F5-6:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90 Micron Technology Inc MT48LC4M32B2B5-6:G vs MT48LC4M32B2F5-6:G
MT48LC4M32B2F5-6:GIT IC 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90, Dynamic RAM Micron Technology Inc MT48LC4M32B2B5-6:G vs MT48LC4M32B2F5-6:GIT
MT48LC4M32B2F5-6IT:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, PLASTIC, VFBGA-90 Micron Technology Inc MT48LC4M32B2B5-6:G vs MT48LC4M32B2F5-6IT:G
MT48LC4M32B2B5-6IT:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90 Micron Technology Inc MT48LC4M32B2B5-6:G vs MT48LC4M32B2B5-6IT:G
MT48LC4M32B2B5-6:GIT IC 4M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90, 8 X 13 MM, LEAD FREE, PLASTIC, VFBGA-90, Dynamic RAM Micron Technology Inc MT48LC4M32B2B5-6:G vs MT48LC4M32B2B5-6:GIT
Part Number Description Manufacturer Compare
K4S283233E-SF600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor MT48LC4M32B2B5-6:G vs K4S283233E-SF600
K4S283233F-EP1L Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor MT48LC4M32B2B5-6:G vs K4S283233F-EP1L
MT48LC4M32B2F5-6ES:G Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90, 8 X 13 MM, FBGA-90 Micron Technology Inc MT48LC4M32B2B5-6:G vs MT48LC4M32B2F5-6ES:G
HY57V283220LTP-55 Synchronous DRAM, 4MX32, 5ns, CMOS, PDSO86, 0.400 X 0.875 INCH, 0.50 MM PITCH, LEAD FREE, TSOP2-86 SK Hynix Inc MT48LC4M32B2B5-6:G vs HY57V283220LTP-55
K4S283233F-MP1H Synchronous DRAM, 4MX32, 6ns, CMOS, PBGA90, FBGA-90 Samsung Semiconductor MT48LC4M32B2B5-6:G vs K4S283233F-MP1H
K4M283233H-HG7L0 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor MT48LC4M32B2B5-6:G vs K4M283233H-HG7L0
W9812G21B-6 Synchronous DRAM, 4MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, ROHS COMPLIANT, TFBGA-90 Winbond Electronics Corp MT48LC4M32B2B5-6:G vs W9812G21B-6
IS42S32400F-6B Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 0.80 MM PITCH, MO-207, TWBGA-90 Integrated Silicon Solution Inc MT48LC4M32B2B5-6:G vs IS42S32400F-6B
K4M283233H-HF7L0 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, LEAD FREE, FBGA-90 Samsung Semiconductor MT48LC4M32B2B5-6:G vs K4M283233H-HF7L0
K4S283233E-SC600 Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 11 X 13 MM, FBGA-90 Samsung Semiconductor MT48LC4M32B2B5-6:G vs K4S283233E-SC600

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