Part Details for MT48LC4M16A2B4-6A:J by Micron Technology Inc
Results Overview of MT48LC4M16A2B4-6A:J by Micron Technology Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
MT48LC4M16A2B4-6A:J Information
MT48LC4M16A2B4-6A:J by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for MT48LC4M16A2B4-6A:J
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
MT48LC4M16A2B4-6A:J
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Avnet Silica | DRAM Chip SDRAM 64MBit 4Mx16 33V 54Pin VFBGA (Alt: MT48LC4M16A2B4-6A:J) RoHS: Compliant Min Qty: 1560 Package Multiple: 1560 Lead time: 143 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
MT48LC4M16A2B4-6A:J
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EBV Elektronik | DRAM Chip SDRAM 64MBit 4Mx16 33V 54Pin VFBGA (Alt: MT48LC4M16A2B4-6A:J) RoHS: Compliant Min Qty: 1560 Package Multiple: 1560 | EBV - 0 |
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Buy Now |
Part Details for MT48LC4M16A2B4-6A:J
MT48LC4M16A2B4-6A:J CAD Models
MT48LC4M16A2B4-6A:J Part Data Attributes
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MT48LC4M16A2B4-6A:J
Micron Technology Inc
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Datasheet
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Compare Parts:
MT48LC4M16A2B4-6A:J
Micron Technology Inc
Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54
Select a part to compare: |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Package Description | VFBGA, BGA54,9X9,32 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.02 | |
Samacsys Manufacturer | Micron | |
Access Mode | FOUR BANK PAGE BURST | |
Access Time-Max | 5.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 167 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 1,2,4,8 | |
JESD-30 Code | S-PBGA-B54 | |
Length | 8 mm | |
Memory Density | 67108864 bit | |
Memory IC Type | SYNCHRONOUS DRAM | |
Memory Width | 16 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 54 | |
Number of Words | 4194304 words | |
Number of Words Code | 4000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 4MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | VFBGA | |
Package Equivalence Code | BGA54,9X9,32 | |
Package Shape | SQUARE | |
Package Style | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | |
Qualification Status | Not Qualified | |
Refresh Cycles | 4096 | |
Seated Height-Max | 1 mm | |
Self Refresh | YES | |
Sequential Burst Length | 1,2,4,8,FP | |
Standby Current-Max | 0.0025 A | |
Supply Current-Max | 0.15 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 3 V | |
Supply Voltage-Nom (Vsup) | 3.3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 8 mm |
Alternate Parts for MT48LC4M16A2B4-6A:J
This table gives cross-reference parts and alternative options found for MT48LC4M16A2B4-6A:J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48LC4M16A2B4-6A:J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
K4S641633H-BE1L0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 | MT48LC4M16A2B4-6A:J vs K4S641633H-BE1L0 |
MT48LC4M16A2B4-75L | Micron Technology Inc | Check for Price | IC,SDRAM,4X1MX16,CMOS,BGA,54PIN,PLASTIC | MT48LC4M16A2B4-6A:J vs MT48LC4M16A2B4-75L |
K4S641633H-BG1H0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 | MT48LC4M16A2B4-6A:J vs K4S641633H-BG1H0 |
K4M64163LK-RG1H0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54 | MT48LC4M16A2B4-6A:J vs K4M64163LK-RG1H0 |
MT48LC4M16A2B4-75IT:G | Micron Technology Inc | Check for Price | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, ROHS COMPLIANT, VFBGA-54 | MT48LC4M16A2B4-6A:J vs MT48LC4M16A2B4-75IT:G |
HY5V66FFP-H | SK Hynix Inc | Check for Price | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-54 | MT48LC4M16A2B4-6A:J vs HY5V66FFP-H |
K4S64163LH-RL1L0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54 | MT48LC4M16A2B4-6A:J vs K4S64163LH-RL1L0 |
EDL6416BABH-75-E | Elpida Memory Inc | Check for Price | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, LEAD FREE, FBGA-54 | MT48LC4M16A2B4-6A:J vs EDL6416BABH-75-E |
K4M64163LK-RF1H0 | Samsung Semiconductor | Check for Price | Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54 | MT48LC4M16A2B4-6A:J vs K4M64163LK-RF1H0 |
HY5V66EF-6 | SK Hynix Inc | Check for Price | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-54 | MT48LC4M16A2B4-6A:J vs HY5V66EF-6 |