Datasheets
MT48LC4M16A2B4-6A:J by: Micron Technology Inc

Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54

Part Details for MT48LC4M16A2B4-6A:J by Micron Technology Inc

Results Overview of MT48LC4M16A2B4-6A:J by Micron Technology Inc

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Applications Consumer Electronics Computing and Data Storage

MT48LC4M16A2B4-6A:J Information

MT48LC4M16A2B4-6A:J by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for MT48LC4M16A2B4-6A:J

Part # Distributor Description Stock Price Buy
DISTI # MT48LC4M16A2B4-6A:J
Avnet Silica DRAM Chip SDRAM 64MBit 4Mx16 33V 54Pin VFBGA (Alt: MT48LC4M16A2B4-6A:J) RoHS: Compliant Min Qty: 1560 Package Multiple: 1560 Lead time: 143 Weeks, 0 Days Silica - 0
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DISTI # MT48LC4M16A2B4-6A:J
EBV Elektronik DRAM Chip SDRAM 64MBit 4Mx16 33V 54Pin VFBGA (Alt: MT48LC4M16A2B4-6A:J) RoHS: Compliant Min Qty: 1560 Package Multiple: 1560 EBV - 0
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Part Details for MT48LC4M16A2B4-6A:J

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MT48LC4M16A2B4-6A:J Part Data Attributes

MT48LC4M16A2B4-6A:J Micron Technology Inc
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MT48LC4M16A2B4-6A:J Micron Technology Inc Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Package Description VFBGA, BGA54,9X9,32
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Samacsys Manufacturer Micron
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 167 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code S-PBGA-B54
Length 8 mm
Memory Density 67108864 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code VFBGA
Package Equivalence Code BGA54,9X9,32
Package Shape SQUARE
Package Style GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.0025 A
Supply Current-Max 0.15 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for MT48LC4M16A2B4-6A:J

This table gives cross-reference parts and alternative options found for MT48LC4M16A2B4-6A:J. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT48LC4M16A2B4-6A:J, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
K4S641633H-BE1L0 Samsung Semiconductor Check for Price Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 MT48LC4M16A2B4-6A:J vs K4S641633H-BE1L0
MT48LC4M16A2B4-75L Micron Technology Inc Check for Price IC,SDRAM,4X1MX16,CMOS,BGA,54PIN,PLASTIC MT48LC4M16A2B4-6A:J vs MT48LC4M16A2B4-75L
K4S641633H-BG1H0 Samsung Semiconductor Check for Price Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, LEAD FREE, FBGA-54 MT48LC4M16A2B4-6A:J vs K4S641633H-BG1H0
K4M64163LK-RG1H0 Samsung Semiconductor Check for Price Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54 MT48LC4M16A2B4-6A:J vs K4M64163LK-RG1H0
MT48LC4M16A2B4-75IT:G Micron Technology Inc Check for Price Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, ROHS COMPLIANT, VFBGA-54 MT48LC4M16A2B4-6A:J vs MT48LC4M16A2B4-75IT:G
HY5V66FFP-H SK Hynix Inc Check for Price Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-54 MT48LC4M16A2B4-6A:J vs HY5V66FFP-H
K4S64163LH-RL1L0 Samsung Semiconductor Check for Price Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, 0.80 MM PITCH, FBGA-54 MT48LC4M16A2B4-6A:J vs K4S64163LH-RL1L0
EDL6416BABH-75-E Elpida Memory Inc Check for Price Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, LEAD FREE, FBGA-54 MT48LC4M16A2B4-6A:J vs EDL6416BABH-75-E
K4M64163LK-RF1H0 Samsung Semiconductor Check for Price Synchronous DRAM, 4MX16, 7ns, CMOS, PBGA54, FBGA-54 MT48LC4M16A2B4-6A:J vs K4M64163LK-RF1H0
HY5V66EF-6 SK Hynix Inc Check for Price Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-54 MT48LC4M16A2B4-6A:J vs HY5V66EF-6

MT48LC4M16A2B4-6A:J Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for this module is 0°C to 95°C, with a storage temperature range of -55°C to 125°C.

  • To ensure signal integrity on the memory bus, it is recommended to use a controlled impedance PCB, route signals as differential pairs, and use a clock signal with a high-quality clock source. Additionally, ensure that the memory module is properly seated and connected to the motherboard.

  • The recommended refresh rate for this module is 4x per 64ms, with a refresh interval of 3.9us.

  • No, this module is designed to operate at a voltage supply of 1.2V, and using it with a different voltage supply may damage the module or affect its performance.

  • The module uses a 72-bit data bus with 8 bits of error correction code (ECC) to detect and correct errors. The module also supports SDRAM-specific error handling mechanisms, such as retry and refresh.