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Memory / DRAMs / MT47H64M4BP-37EIT:B
Datasheets
MT47H64M4BP-37EIT:B by: Micron Technology Inc

DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, 8 X 12 MM, ROHS COMPLIANT, FBGA-60

Part Details for MT47H64M4BP-37EIT:B by Micron Technology Inc

Results Overview of MT47H64M4BP-37EIT:B by Micron Technology Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

MT47H64M4BP-37EIT:B Information

MT47H64M4BP-37EIT:B by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for MT47H64M4BP-37EIT:B

Part # Distributor Description Stock Price Buy
Quest Components IC,SDRAM,DDR,4X16MX4,CMOS,BGA,60PIN,PLASTIC 1000
  • 1 $12.7500
  • 393 $4.6750
  • 643 $4.4625
$4.4625 / $12.7500 Buy Now

Part Details for MT47H64M4BP-37EIT:B

MT47H64M4BP-37EIT:B CAD Models

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MT47H64M4BP-37EIT:B Part Data Attributes

Parametric Data
MT47H64M4BP-37EIT:B Micron Technology Inc
Buy Now Datasheet
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MT47H64M4BP-37EIT:B Micron Technology Inc DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, 8 X 12 MM, ROHS COMPLIANT, FBGA-60
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Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description TFBGA, BGA60,9X11,32
Pin Count 60
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.24
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.5 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 266 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e1
Length 12 mm
Memory Density 268435456 bit
Memory IC Type DDR2 DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 67108864 words
Number of Words Code 64000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 64MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA60,9X11,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.005 A
Supply Current-Max 0.24 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Width 8 mm

Alternate Parts for MT47H64M4BP-37EIT:B

This table gives cross-reference parts and alternative options found for MT47H64M4BP-37EIT:B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H64M4BP-37EIT:B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MT47H64M4BP-37ELIT:B Micron Technology Inc Check for Price DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, 8 X 12 MM, ROHS COMPLIANT, FBGA-60 MT47H64M4BP-37EIT:B vs MT47H64M4BP-37ELIT:B
Part Number Manufacturer Composite Price Description Compare
MT46V64M4CV-6IT:K Micron Technology Inc Check for Price DDR DRAM, 64MX4, 0.7ns, CMOS, PBGA60, 8 X 12.50 MM, PLASTIC, FBGA-60 MT47H64M4BP-37EIT:B vs MT46V64M4CV-6IT:K
K4T56043QF-GLE60 Samsung Semiconductor Check for Price DDR DRAM, 64MX4, 0.45ns, CMOS, PBGA60, FBGA-60 MT47H64M4BP-37EIT:B vs K4T56043QF-GLE60
V58C2256404SCJ6I ProMOS Technologies Inc Check for Price DDR DRAM, 64MX4, 0.7ns, CMOS, PBGA60, GREEN, MO-233, FBGA-60 MT47H64M4BP-37EIT:B vs V58C2256404SCJ6I
MT46V64M4FG-6T:F Micron Technology Inc Check for Price DDR DRAM, 64MX4, 0.7ns, CMOS, PBGA60, (8 X 14) MM, PLASTIC, FBGA-60 MT47H64M4BP-37EIT:B vs MT46V64M4FG-6T:F
MT46V64M4BJ-6IT Micron Technology Inc Check for Price DDR DRAM, 64MX4, 0.7ns, CMOS, PBGA60, 16 X 9 MM, PLASTIC, FBGA-60 MT47H64M4BP-37EIT:B vs MT46V64M4BJ-6IT
HYB18T256400AF-3.7 Qimonda AG Check for Price DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, GREEN, PLASTIC, TFBGA-60 MT47H64M4BP-37EIT:B vs HYB18T256400AF-3.7
MT47H64M4BP-37V:B Micron Technology Inc Check for Price DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, 8 X 12 MM, LEAD FREE, FBGA-60 MT47H64M4BP-37EIT:B vs MT47H64M4BP-37V:B
MT47H64M4FP-3LIT:B Micron Technology Inc Check for Price DDR DRAM, 64MX4, 0.45ns, CMOS, PBGA60, 8 X 12 MM, FBGA-60 MT47H64M4BP-37EIT:B vs MT47H64M4FP-3LIT:B
V58C2256404SCLJ5D ProMOS Technologies Inc Check for Price DDR DRAM, 64MX4, 0.65ns, CMOS, PBGA60, GREEN, MO-233, FBGA-60 MT47H64M4BP-37EIT:B vs V58C2256404SCLJ5D
V58C2256404SAJ-5 ProMOS Technologies Inc Check for Price DDR DRAM, 64MX4, 0.65ns, CMOS, PBGA60, GREEN, MO-233, FBGA-60 MT47H64M4BP-37EIT:B vs V58C2256404SAJ-5