Part Details for MT47H64M4BP-37E:B by Micron Technology Inc
Overview of MT47H64M4BP-37E:B by Micron Technology Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Price & Stock for MT47H64M4BP-37E:B
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 64M X 4 DDR DRAM, 0.5 NS, PBGA60 | 10 |
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$12.3750 / $16.5000 | Buy Now |
Part Details for MT47H64M4BP-37E:B
MT47H64M4BP-37E:B CAD Models
MT47H64M4BP-37E:B Part Data Attributes
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MT47H64M4BP-37E:B
Micron Technology Inc
Buy Now
Datasheet
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MT47H64M4BP-37E:B
Micron Technology Inc
DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, 8 X 12 MM, ROHS COMPLIANT, FBGA-60
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA60,9X11,32 | |
| Pin Count | 60 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.5 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 266 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| JESD-609 Code | e1 | |
| Length | 12 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 67108864 words | |
| Number of Words Code | 64000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 64MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA60,9X11,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Standby Current-Max | 0.005 A | |
| Supply Current-Max | 0.24 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for MT47H64M4BP-37E:B
This table gives cross-reference parts and alternative options found for MT47H64M4BP-37E:B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H64M4BP-37E:B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| K4H560438D-GLB3 | Samsung Semiconductor | Check for Price | DDR DRAM, 64MX4, 0.7ns, CMOS, PBGA60, FBGA-60 | MT47H64M4BP-37E:B vs K4H560438D-GLB3 |
| MT46V64M4BG-6L:G | Micron Technology Inc | Check for Price | DDR DRAM, 64MX4, 0.7ns, CMOS, PBGA60, 8 X 14 MM, LEAD FREE, PLASTIC, FBGA-60 | MT47H64M4BP-37E:B vs MT46V64M4BG-6L:G |
| V58C2256404SHUH4 | ProMOS Technologies Inc | Check for Price | DDR DRAM, 64MX4, CMOS, PBGA60, ROHS COMPLIANT, MO-233, BGA-60 | MT47H64M4BP-37E:B vs V58C2256404SHUH4 |
| MT47H64M4BP-37E | Micron Technology Inc | Check for Price | DDR DRAM, 64MX4, 0.5ns, CMOS, PBGA60, 8 X 12 MM, LEAD FREE, FBGA-60 | MT47H64M4BP-37E:B vs MT47H64M4BP-37E |
| V54C3256404VBLS7PC | ProMOS Technologies Inc | Check for Price | Synchronous DRAM, 64MX4, 5.4ns, CMOS, PBGA60, MO-210, FBGA-60 | MT47H64M4BP-37E:B vs V54C3256404VBLS7PC |
| V54C3256404VDLF7I | ProMOS Technologies Inc | Check for Price | Synchronous DRAM, 64MX4, 5.4ns, CMOS, PBGA60, ROHS COMPLIANT, MO-210, FBGA-60 | MT47H64M4BP-37E:B vs V54C3256404VDLF7I |
| V58C2256404SHUF4E | ProMOS Technologies Inc | Check for Price | DDR DRAM, 64MX4, CMOS, PBGA60, ROHS COMPLIANT, MO-233, FBGA-60 | MT47H64M4BP-37E:B vs V58C2256404SHUF4E |
| HY5PS56421LF-E3 | SK Hynix Inc | Check for Price | DDR DRAM, 64MX4, 0.6ns, CMOS, PBGA60, FBGA-60 | MT47H64M4BP-37E:B vs HY5PS56421LF-E3 |
| MT46V64M4FG-75LIT:C | Micron Technology Inc | Check for Price | DDR DRAM, 64MX4, 0.75ns, CMOS, PBGA60, 8 X 14 MM, PLASTIC, FBGA-60 | MT47H64M4BP-37E:B vs MT46V64M4FG-75LIT:C |
| MT46V64M4BG-75ZL | Micron Technology Inc | Check for Price | DDR DRAM, 64MX4, 0.75ns, CMOS, PBGA60, 8 X 14 MM, LEAD FREE, PLASTIC, FBGA-60 | MT47H64M4BP-37E:B vs MT46V64M4BG-75ZL |