Part Details for MT47H256M4CF-25E:H by Micron Technology Inc
Results Overview of MT47H256M4CF-25E:H by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
MT47H256M4CF-25E:H Information
MT47H256M4CF-25E:H by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for MT47H256M4CF-25E:H
MT47H256M4CF-25E:H CAD Models
MT47H256M4CF-25E:H Part Data Attributes
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MT47H256M4CF-25E:H
Micron Technology Inc
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Datasheet
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MT47H256M4CF-25E:H
Micron Technology Inc
DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICRON TECHNOLOGY INC | |
| Part Package Code | BGA | |
| Package Description | TFBGA, BGA60,9X11,32 | |
| Pin Count | 60 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.32 | |
| Access Mode | MULTI BANK PAGE BURST | |
| Access Time-Max | 0.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 400 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 4,8 | |
| JESD-30 Code | R-PBGA-B60 | |
| JESD-609 Code | e1 | |
| Length | 10 mm | |
| Memory Density | 1073741824 bit | |
| Memory IC Type | DDR2 DRAM | |
| Memory Width | 4 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 60 | |
| Number of Words | 268435456 words | |
| Number of Words Code | 256000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | ||
| Organization | 256MX4 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA60,9X11,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 4,8 | |
| Supply Current-Max | 0.21 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | OTHER | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
Alternate Parts for MT47H256M4CF-25E:H
This table gives cross-reference parts and alternative options found for MT47H256M4CF-25E:H. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT47H256M4CF-25E:H, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| MT47H256M4HV-25L:G | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 | MT47H256M4CF-25E:H vs MT47H256M4HV-25L:G |
| MT47H256M4HV-25IT:G | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 | MT47H256M4CF-25E:H vs MT47H256M4HV-25IT:G |
| MT47H256M4HV-25LAT:E | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 | MT47H256M4CF-25E:H vs MT47H256M4HV-25LAT:E |
| MT47H256M4HV-25LIT:G | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 11.50 MM, FBGA-60 | MT47H256M4CF-25E:H vs MT47H256M4HV-25LIT:G |
| MT47H256M4HQ-25AT:E | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | MT47H256M4CF-25E:H vs MT47H256M4HQ-25AT:E |
| MT47H256M4HQ-25:G | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | MT47H256M4CF-25E:H vs MT47H256M4HQ-25:G |
| EDE1104AFSE-8G-F | Elpida Memory Inc | Check for Price | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 | MT47H256M4CF-25E:H vs EDE1104AFSE-8G-F |
| MT47H256M4HQ-25EL:G | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | MT47H256M4CF-25E:H vs MT47H256M4HQ-25EL:G |
| MT47H256M4HQ-25ELAT:G | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | MT47H256M4CF-25E:H vs MT47H256M4HQ-25ELAT:G |
| MT47H256M4HQ-25LIT:G | Micron Technology Inc | Check for Price | DDR DRAM, 256MX4, 0.4ns, CMOS, PBGA60, 8 X 11.50 MM, ROHS COMPLIANT, FBGA-60 | MT47H256M4CF-25E:H vs MT47H256M4HQ-25LIT:G |