Datasheets
MT46V32M16BN-5B:F by: Micron Technology Inc

DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60

Part Details for MT46V32M16BN-5B:F by Micron Technology Inc

Overview of MT46V32M16BN-5B:F by Micron Technology Inc

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Price & Stock for MT46V32M16BN-5B:F

Part # Distributor Description Stock Price Buy
Bristol Electronics   3
RFQ
Win Source Electronics DRAM Chip DDR SDRAM 512Mbit 32Mx16 2.6V 60-Pin FBGA Tray / IC SDRAM 512MBIT 200MHZ 60FBGA 89
  • 3 $16.7142
  • 8 $13.7143
  • 12 $13.2857
  • 16 $12.8571
  • 21 $12.4286
  • 27 $11.1428
$11.1428 / $16.7142 Buy Now

Part Details for MT46V32M16BN-5B:F

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MT46V32M16BN-5B:F Part Data Attributes

MT46V32M16BN-5B:F Micron Technology Inc
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MT46V32M16BN-5B:F Micron Technology Inc DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, LEAD FREE, PLASTIC, FBGA-60
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code BGA
Package Description TBGA, BGA60,9X12,40/32
Pin Count 60
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.28
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 200 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PBGA-B60
JESD-609 Code e1
Length 12.5 mm
Memory Density 536870912 bit
Memory IC Type DDR1 DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 60
Number of Words 33554432 words
Number of Words Code 32000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TBGA
Package Equivalence Code BGA60,9X12,40/32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.005 A
Supply Current-Max 0.48 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.5 V
Supply Voltage-Nom (Vsup) 2.6 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Width 10 mm

Alternate Parts for MT46V32M16BN-5B:F

This table gives cross-reference parts and alternative options found for MT46V32M16BN-5B:F. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT46V32M16BN-5B:F, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT46V32M16FN-5B:D DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 Micron Technology Inc MT46V32M16BN-5B:F vs MT46V32M16FN-5B:D
MT46V32M16CV-5B:J DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 8 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc MT46V32M16BN-5B:F vs MT46V32M16CV-5B:J
MT46V32M16BN-5BL:D DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 Micron Technology Inc MT46V32M16BN-5B:F vs MT46V32M16BN-5BL:D
MT46V32M16FN-5B:F DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc MT46V32M16BN-5B:F vs MT46V32M16FN-5B:F
MT46V32M16FN-5BL:F DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 10 X 12.50 MM, PLASTIC, FBGA-60 Micron Technology Inc MT46V32M16BN-5B:F vs MT46V32M16FN-5BL:F
Part Number Description Manufacturer Compare
NT5DS32M16BF-6K DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60, 0.80 X 1 MM PITCH, BGA-60 Nanya Technology Corporation MT46V32M16BN-5B:F vs NT5DS32M16BF-6K
MT47H32M16CB-25:B DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA60, 12 X 10 MM, ROHS COMPLIANT, FBGA-60 Micron Technology Inc MT46V32M16BN-5B:F vs MT47H32M16CB-25:B
K4H511638C-ZPB00 DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 Samsung Semiconductor MT46V32M16BN-5B:F vs K4H511638C-ZPB00
K4H511638G-HCC00 DDR DRAM, 32MX16, 0.55ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60 Samsung Semiconductor MT46V32M16BN-5B:F vs K4H511638G-HCC00
V58C2512164SDLJ75 DDR DRAM, 32MX16, CMOS, PBGA60, GREEN, MO-207, FBGA-60 ProMOS Technologies Inc MT46V32M16BN-5B:F vs V58C2512164SDLJ75
MT46HC32M16LGBF-6IT:B DDR DRAM, 32MX16, 6ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc MT46V32M16BN-5B:F vs MT46HC32M16LGBF-6IT:B
MT46H32M16LGBF-75LIT:C DDR DRAM, 32MX16, CMOS, PBGA60, 9 X 8 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc MT46V32M16BN-5B:F vs MT46H32M16LGBF-75LIT:C
H5DU5162EFR-L2L DDR DRAM, 32MX16, 0.75ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 SK Hynix Inc MT46V32M16BN-5B:F vs H5DU5162EFR-L2L
MT46H32M16LFBF-54LIT:C DDR DRAM, 32MX16, 5ns, CMOS, PBGA60, 8 X 9 MM, GREEN, PLASTIC, VFBGA-60 Micron Technology Inc MT46V32M16BN-5B:F vs MT46H32M16LFBF-54LIT:C
MT46H32M16LFCK-75IT DDR DRAM, 32MX16, 6ns, CMOS, PBGA60, 10 X 11.5 MM, LEAD FREE, PLASTIC, VFBGA-60 Micron Technology Inc MT46V32M16BN-5B:F vs MT46H32M16LFCK-75IT

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