Datasheets
MT46V16M8P-6T:D by: Micron Technology Inc

DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66

Part Details for MT46V16M8P-6T:D by Micron Technology Inc

Overview of MT46V16M8P-6T:D by Micron Technology Inc

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Price & Stock for MT46V16M8P-6T:D

Part # Distributor Description Stock Price Buy
Bristol Electronics   180
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Part Details for MT46V16M8P-6T:D

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MT46V16M8P-6T:D Part Data Attributes:

MT46V16M8P-6T:D Micron Technology Inc
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MT46V16M8P-6T:D Micron Technology Inc DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code TSOP
Package Description 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66
Pin Count 66
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e3
Length 22.22 mm
Memory Density 134217728 bit
Memory IC Type DDR1 DRAM
Memory Width 8
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.003 A
Supply Current-Max 0.355 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Width 10.16 mm

Alternate Parts for MT46V16M8P-6T:D

This table gives cross-reference parts and alternative options found for MT46V16M8P-6T:D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT46V16M8P-6T:D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MT46V16M8TG-6TL:D DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V16M8P-6T:D vs MT46V16M8TG-6TL:D
K4H280838D-TLB3 DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor MT46V16M8P-6T:D vs K4H280838D-TLB3
MT46V16M8P-6TL:D DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc MT46V16M8P-6T:D vs MT46V16M8P-6TL:D
K4H280838D-TCB3 DDR DRAM, 16MX8, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor MT46V16M8P-6T:D vs K4H280838D-TCB3
Part Number Description Manufacturer Compare
DPDD16MX8RLBY5-DP-XX0820 Synchronous DRAM, 16MX8, CMOS, PDSO66, STACK, LEADLESS, MODULE, TSOP-66 B&B Electronics Manufacturing Company MT46V16M8P-6T:D vs DPDD16MX8RLBY5-DP-XX0820
K4H280838F-ULA20 DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor MT46V16M8P-6T:D vs K4H280838F-ULA20
K4H280838C-TCA2 DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor MT46V16M8P-6T:D vs K4H280838C-TCA2
MT46V16M8TG-75ZL DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V16M8P-6T:D vs MT46V16M8TG-75ZL
KM48L16031BT-FZ DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66 Samsung Semiconductor MT46V16M8P-6T:D vs KM48L16031BT-FZ
MT46V16M8TG-5 DDR DRAM, 16MX8, 0.6ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V16M8P-6T:D vs MT46V16M8TG-5
K4H280838B-TLA0 DDR DRAM, 16MX8, 0.8ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66 Samsung Semiconductor MT46V16M8P-6T:D vs K4H280838B-TLA0
K4H280838F-TLB00 DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor MT46V16M8P-6T:D vs K4H280838F-TLB00
MT46V16M8TG-75L:A DDR DRAM, 16MX8, 0.75ns, CMOS, PDSO66, 0.400 INCH, PLASTIC, TSOP-66 Micron Technology Inc MT46V16M8P-6T:D vs MT46V16M8TG-75L:A
HY5DU1298022ALTC-80 DDR DRAM, 16MX8, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc MT46V16M8P-6T:D vs HY5DU1298022ALTC-80

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