Part Details for MT36HTF51272FZ-80EH1D6 by Micron Technology Inc
Results Overview of MT36HTF51272FZ-80EH1D6 by Micron Technology Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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MT36HTF51272FZ-80EH1D6 Information
MT36HTF51272FZ-80EH1D6 by Micron Technology Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for MT36HTF51272FZ-80EH1D6
MT36HTF51272FZ-80EH1D6 CAD Models
MT36HTF51272FZ-80EH1D6 Part Data Attributes
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MT36HTF51272FZ-80EH1D6
Micron Technology Inc
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Datasheet
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MT36HTF51272FZ-80EH1D6
Micron Technology Inc
DDR DRAM Module, 512MX72, CMOS, HALOGEN FREE, M0-256, FBDIMM-240
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | MICRON TECHNOLOGY INC | |
Part Package Code | DIMM | |
Package Description | HALOGEN FREE, M0-256, FBDIMM-240 | |
Pin Count | 240 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Samacsys Manufacturer | Micron | |
Access Mode | MULTI BANK PAGE BURST | |
Additional Feature | WD-MAX | |
Clock Frequency-Max (fCLK) | 400 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-XDMA-N240 | |
JESD-609 Code | e4 | |
Length | 133.35 mm | |
Memory Density | 38654705664 bit | |
Memory IC Type | DDR DRAM MODULE | |
Memory Width | 72 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 240 | |
Number of Words | 536870912 words | |
Number of Words Code | 512000000 | |
Operating Mode | SYNCHRONOUS | |
Organization | 512MX72 | |
Output Characteristics | 3-STATE | |
Package Body Material | UNSPECIFIED | |
Package Code | DIMM | |
Package Equivalence Code | DIMM240,40 | |
Package Shape | RECTANGULAR | |
Package Style | MICROELECTRONIC ASSEMBLY | |
Qualification Status | Not Qualified | |
Refresh Cycles | 8192 | |
Seated Height-Max | 30.5 mm | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | NO | |
Technology | CMOS | |
Terminal Finish | Gold (Au) | |
Terminal Form | NO LEAD | |
Terminal Pitch | 1 mm | |
Terminal Position | DUAL | |
Width | 4 mm |
Alternate Parts for MT36HTF51272FZ-80EH1D6
This table gives cross-reference parts and alternative options found for MT36HTF51272FZ-80EH1D6. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT36HTF51272FZ-80EH1D6, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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M393T5168MZ0-CD5 | Samsung Semiconductor | Check for Price | DDR DRAM Module, 512MX72, 0.5ns, CMOS, ROHS COMPLIANT, DIMM-240 | MT36HTF51272FZ-80EH1D6 vs M393T5168MZ0-CD5 |
M393T5160CZ3-CCC | Samsung Semiconductor | Check for Price | DDR DRAM Module, 512MX72, 0.6ns, CMOS, ROHS COMPLIANT, DIMM-240 | MT36HTF51272FZ-80EH1D6 vs M393T5160CZ3-CCC |
MT36JSZF51272PIY-80CI | Micron Technology Inc | Check for Price | DDR DRAM Module, 512MX72, CMOS, LEAD FREE, RDIMM-240 | MT36HTF51272FZ-80EH1D6 vs MT36JSZF51272PIY-80CI |
MT18JDF51272PZ-1G1XX | Micron Technology Inc | Check for Price | DDR DRAM Module, 512MX72, CMOS, HALOGEN FREE, RDIMM-240 | MT36HTF51272FZ-80EH1D6 vs MT18JDF51272PZ-1G1XX |
IMSH4GP12A1F2C-08E | Qimonda AG | Check for Price | DDR DRAM Module, 512MX72, CMOS, GREEN, RDIMM-240 | MT36HTF51272FZ-80EH1D6 vs IMSH4GP12A1F2C-08E |
MT36JDZS51272DZ-1G6XX | Micron Technology Inc | Check for Price | DDR DRAM Module, 512MX72, CMOS, HALOGEN FREE, RDIMM-240 | MT36HTF51272FZ-80EH1D6 vs MT36JDZS51272DZ-1G6XX |
W3HG128M72AEF534F1MAG | Microsemi Corporation | Check for Price | DDR DRAM Module, 256MX4, CMOS, ROHS COMPLIANT, FBDIMM-240 | MT36HTF51272FZ-80EH1D6 vs W3HG128M72AEF534F1MAG |
MT18JBZF25672PDIY-1G5XX | Micron Technology Inc | Check for Price | DDR DRAM Module, 256MX8, CMOS, LEAD FREE, RDIMM-240 | MT36HTF51272FZ-80EH1D6 vs MT18JBZF25672PDIY-1G5XX |
MT18JBF25672PDIY-80CXX | Micron Technology Inc | Check for Price | DDR DRAM Module, 256MX8, CMOS, LEAD FREE, RDIMM-240 | MT36HTF51272FZ-80EH1D6 vs MT18JBF25672PDIY-80CXX |
MT36JBZS51272PDY-1G1XX | Micron Technology Inc | Check for Price | DDR DRAM Module, 512MX8, CMOS, LEAD FREE, RDIMM-240 | MT36HTF51272FZ-80EH1D6 vs MT36JBZS51272PDY-1G1XX |