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Memory / Flash Memories / MT29F512G08EBHBFJ4-R:B
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MT29F512G08EBHBFJ4-R:B by: Micron Technology Inc

Flash Memory,

Part Details for MT29F512G08EBHBFJ4-R:B by Micron Technology Inc

Results Overview of MT29F512G08EBHBFJ4-R:B by Micron Technology Inc

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MT29F512G08EBHBFJ4-R:B Information

MT29F512G08EBHBFJ4-R:B by Micron Technology Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for MT29F512G08EBHBFJ4-R:B

Part # Distributor Description Stock Price Buy
DISTI # 80AH7811
Newark Flash Memory, 512Gbit, 0 To 70Deg C, Flash Memory Type:Tlc Nand, Memory Configuration:64G X 8Bit, ... Interfaces:Parallel, Ic Case/Package:Vbga, No. Of Pins:132Pins, Clock Frequency Max:-, Access Time:-, Supply Voltage Min:- Rohs Compliant: Yes |Micron MT29F512G08EBHBFJ4-R:B more RoHS: Compliant Min Qty: 1120 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $14.4500
$14.4500 Buy Now
DISTI # MT29F512G08EBHBFJ4-R:B
Avnet Silica TLC 512G 64GX8 VBGA (Alt: MT29F512G08EBHBFJ4-R:B) RoHS: Compliant Min Qty: 1120 Package Multiple: 1 Lead time: 143 Weeks, 0 Days Silica - 0
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Part Details for MT29F512G08EBHBFJ4-R:B

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MT29F512G08EBHBFJ4-R:B Part Data Attributes

Parametric Data
MT29F512G08EBHBFJ4-R:B Micron Technology Inc
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MT29F512G08EBHBFJ4-R:B Micron Technology Inc Flash Memory,
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Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.51
Date Of Intro 2020-03-31
Samacsys Manufacturer Micron
JESD-609 Code e1
Peak Reflow Temperature (Cel) 260
Terminal Finish TIN SILVER COPPER
Time@Peak Reflow Temperature-Max (s) 30

MT29F512G08EBHBFJ4-R:B Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the MT29F512G08EBHBFJ4-R:B is -40°C to 85°C.

  • The MT29F512G08EBHBFJ4-R:B can withstand up to 3,000 cycles of erase and program.

  • The typical programming time for the MT29F512G08EBHBFJ4-R:B is around 1.5 ms per 256-byte block.

  • Yes, the MT29F512G08EBHBFJ4-R:B supports simultaneous read and write operations, allowing for improved system performance.

  • The minimum clock frequency required for the MT29F512G08EBHBFJ4-R:B is 3 MHz.